Document
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features TAB
Type STP10NK80Z STP10NK80ZFP STW10NK80Z
VDSS 800V 800V 800V
RDS(on) ID <0.90Ω 9A <0.90Ω 9A <0.90Ω 9A
Pw 160 W 40 W 160 W
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability
3 2 1
TO-220
3 2 1
TO-220FP
TO-247
Applications
■ Switching application
Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary Part number STP10NK80Z
STP10NK80ZFP STW10NK80Z
Marking P10NK80Z P10NK80ZFP W10NK80Z
Package TO-220 TO-220FP TO-247
Packaging Tube Tube Tube
March 2012
This is information on a product in full production.
Doc ID 8911 Rev 7
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www.st.com
17
Contents
Contents
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDSS VDGR VGS
Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20kΩ) Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
ID IDM(2)
Drain current (continuous) at TC=100°C Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C Derating factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) dv/dt(3) Peak diode recovery voltage slope
VISO Insulation withstand voltage (DC)
TJ
Operating junction temperature
Tstg
Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 9 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Value Unit
TO-220/ TO-247 TO-220FP
800 800 ± 30 9 6 36 160 1.28
4 4.5 --
9(1) 6(1) 36(1) 40 0.32
2500
V V V A A A W W/°C kV V/ns V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Rthj-a
Thermal resistance junction-case Max Thermal resistance junction-ambient Max
Value Unit
TO-220 TO-220FP TO-247
0.78
3.1
62.5
0.78 °C/W
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
9
A
290
mJ
Doc ID 8911 Rev 7
3/17
Electrical characteristics
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
IDSS
Zero gate voltage drain current (VGS = 0)
IGSS VGS(th) RDS(on)
Gate body leakage current (VDS = 0)
Gate threshold voltage
Static drain-source on resistance
ID = 1mA, VGS= 0 VDS = 800V VDS = 800V, TC = 125°C VGS = ±20V VDS= VGS, ID = 100µA VGS= 10V, ID= 4.5A
Min. Typ. Max. Unit
800
V
1
µA
50 µA
±10 µA
3 3.75 4.5 V 0.78 0.9 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance
Ciss Coss Crss
Input capacitance Output capacitance Reverse transfer capacitance
Coss
(2) eq .
Equivalent output
capacitance
Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge
VDS =15V, ID = 4.5A
VDS =25V, f=1 MHz, VGS=0
VGS=0, VDS =0V to 640V VDD=640V, ID = 9A VGS =10V See Figure 20
- 9.6 -
S
2180
pF
- 205 - pF
38
pF
- 105 - pF
72
nC
- 12.5 - nC
37
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
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Doc ID 8911 Rev 7
STP10NK80Z, STP10NK80ZFP, STW10NK80Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on) tr
Turn-on delay time Rise time
td(off) tf
Turn-off delay Time Fall time
Test conditions
VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V See Figure 21
VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V See Fig.