STP10NK80Z. P10NK80Z Datasheet

P10NK80Z STP10NK80Z. Datasheet pdf. Equivalent

Part P10NK80Z
Description STP10NK80Z
Feature ( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com STP10NK80ZFP STP10NK80Z - STW10NK80Z N-CHA.
Manufacture ST Microelectronics
Datasheet
Download P10NK80Z Datasheet

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com ST P10NK80Z Datasheet
STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω P10NK80ZFP Datasheet
Recommendation Recommendation Datasheet P10NK80Z Datasheet




P10NK80Z
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STP10NK80ZFP
STP10NK80Z - STW10NK80Z
N-CHANNEL 800V - 0.78- 9A - TO-220/FP-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
ID
Pw
STW10NK80Z 800 V <0.90 9 A 160 W
STP10NK80Z 800 V <0.90 9 A 160 W
STP10NK80ZFP 800 V <0.90 9 A 40 W
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES
s DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
Internal schematic diagram
Sales Type
STP10NK80Z
STP10NK80ZFP
STW10NK80Z
Marking
P10NK80Z
P10NK80ZFP
W10NK80Z
Package
TO-220
TO-220FP
TO-247
Packaging
TUBE
TUBE
TUBE
August 2005
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Rev 2
1/14
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P10NK80Z
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1 Electrical ratings
1 Electrical ratings
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20k)
VGS Gate-Source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Value
TO-220/ TO-247
TO-220FP
9
6
36
160
1.28
--
800
800
± 30
4
4.5
9 (Note 1)
6 (Note 1)
36 (Note 1)
40
0.32
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
°C
Table 2. Thermal data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
TO-220FP
0.78 3.1
62.5
300
TO-247
0.78
50
Unit
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
Max Value
9
290
Unit
A
mJ
2/14





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