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P10NK80Z Dataheets PDF



Part Number P10NK80Z
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description STP10NK80Z
Datasheet P10NK80Z DatasheetP10NK80Z Datasheet (PDF)

STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) ID <0.90Ω 9A <0.90Ω 9A <0.90Ω 9A Pw 160 W 40 W 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability 3 2 1 TO-220 3 2 1 TO-220FP .

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STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) ID <0.90Ω 9A <0.90Ω 9A <0.90Ω 9A Pw 160 W 40 W 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability 3 2 1 TO-220 3 2 1 TO-220FP TO-247 Applications ■ Switching application Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram D(2,TAB) G(1) S(3) AM01476v1 Table 1. Device summary Part number STP10NK80Z STP10NK80ZFP STW10NK80Z Marking P10NK80Z P10NK80ZFP W10NK80Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube March 2012 This is information on a product in full production. Doc ID 8911 Rev 7 1/17 www.st.com 17 Contents Contents STP10NK80Z, STP10NK80ZFP, STW10NK80Z 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 Doc ID 8911 Rev 7 STP10NK80Z, STP10NK80ZFP, STW10NK80Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDSS VDGR VGS Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20kΩ) Gate-source voltage ID Drain current (continuous) at TC = 25°C ID IDM(2) Drain current (continuous) at TC=100°C Drain current (pulsed) PTOT Total dissipation at TC = 25°C Derating factor Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (DC) TJ Operating junction temperature Tstg Storage temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 9 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value Unit TO-220/ TO-247 TO-220FP 800 800 ± 30 9 6 36 160 1.28 4 4.5 -- 9(1) 6(1) 36(1) 40 0.32 2500 V V V A A A W W/°C kV V/ns V -55 to 150 °C Table 3. Thermal data Symbol Parameter Rthj-case Rthj-a Thermal resistance junction-case Max Thermal resistance junction-ambient Max Value Unit TO-220 TO-220FP TO-247 0.78 3.1 62.5 0.78 °C/W 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Avalanche current, repetitive or not-repetitive IAS (pulse width limited by Tj Max) Single pulse avalanche energy EAS (starting Tj=25°C, Id=Iar, Vdd=50V) Value Unit 9 A 290 mJ Doc ID 8911 Rev 7 3/17 Electrical characteristics STP10NK80Z, STP10NK80ZFP, STW10NK80Z 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage drain current (VGS = 0) IGSS VGS(th) RDS(on) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance ID = 1mA, VGS= 0 VDS = 800V VDS = 800V, TC = 125°C VGS = ±20V VDS= VGS, ID = 100µA VGS= 10V, ID= 4.5A Min. Typ. Max. Unit 800 V 1 µA 50 µA ±10 µA 3 3.75 4.5 V 0.78 0.9 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Coss (2) eq . Equivalent output capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS =15V, ID = 4.5A VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 640V VDD=640V, ID = 9A VGS =10V See Figure 20 - 9.6 - S 2180 pF - 205 - pF 38 pF - 105 - pF 72 nC - 12.5 - nC 37 nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/17 Doc ID 8911 Rev 7 STP10NK80Z, STP10NK80ZFP, STW10NK80Z Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off delay Time Fall time Test conditions VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V See Figure 21 VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V See Fig.


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