STP10NB20FP

( DataSheet : www.DataSheet4U.com ) N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH™ MOSFET Table 1. General Features Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.25 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ ■ Figure 2. Internal Schematic Diagram SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Table 2. Order Codes Part Number STP10NB20 STP10NB20FP Marking P10NB20 P10NB20FP Package TO-220 TO-220FP Packaging TUBE TUBE REV.2 April 2004 1/9 www.DataSheet4U.com www.DataSheet4U.com STP10NB20/FP Table 3. Absolute Maximum Ratings Value Symbol VDS VDGR VGS ID ID IDM (1) Ptot Parameter STP10NB20 Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (cont.) at TC = 25 °C Drain Curre...