radio module. BGB101 Datasheet

BGB101 module. Datasheet pdf. Equivalent

Part BGB101
Description 0 dBm Bluetooth radio module
Feature ( DataSheet : ) DISCRETE SEMICONDUCTORS DATA SHEET BGB101 0 dBm Bluetooth rad.
Manufacture NXP
Download BGB101 Datasheet

( DataSheet : ) DISCRETE SEMICONDUCTORS BGB101 Datasheet
Recommendation Recommendation Datasheet BGB101 Datasheet

( DataSheet : )
0 dBm Bluetooth radio module
Preliminary specification
2003 Aug 05

Philips Semiconductors
0 dBm Bluetooth radio module
Preliminary specification
Plug-and-play Bluetooth class 2 radio module, needs
only external antenna and reference clock
Low current consumption from 2.8 V supply
Wide operating temperature range (30 to +85 °C)
Small dimensions (10.5 x 8.5 x 1.8 mm)
Fully compliant to Bluetooth Radio Specification v1.1
High sensitivity (typical 82 dBm)
Advanced DC offset compensation for improved
reception quality
RSSI with high dynamic range
Simple interfacing to baseband controller, control by
3-wire serial bus
Internal shielding for better EMI (Electro Magnetic
Interference) immunity.
Bluetooth transceivers in:
Cellular phones
Laptop computers
Personal digital assistants
Consumer applications.
The BGB101 Bluetooth radio module is a short-range radio
transceiver for wireless links operating in the globally
available ISM band, between 2402 and 2480 MHz. It is
composed of a fully integrated, state-of-the-art
near-zero-IF transceiver chip, an antenna filter for
out-of-band blocking performance, a TX/RX switch, TX
and RX balans, the VCO resonator and a basic amount of
supply decoupling. The device is a “Plug-and Play” module
that needs no external components for proper operation.
Robust design allows for untrimmed components, giving a
cost-optimized solution. Demodulation is done in
open-loop mode to reduce the effects of reference
frequency breakthrough on reception quality. An advanced
offset compensation circuit compensates for VCO drift and
RF frequency errors during open-loop demodulation,
under control by the baseband processor.
The circuit is integrated on a ceramic substrate. It is
connected to the main PCB through a LGA (Land Grid
Array). The RF port has a normalized 50 impedance and
can be connected directly to an external antenna, with a
50 transmission line.
which leads to a low-power solution. Control of the module
operating mode is done through a 3-wire serial bus and
one additional control signal.
TX and RX data I/O lines are analogue-mode interfaces.
A high-dynamic range RSSI output allows
near-instantaneous assessment of radio link quality.
Frequency selection is done internally by a conventional
synthesizer. It is controlled by the same serial 3-wire bus.
The synthesizer accepts reference frequencies of 12 and
13. This reference frequency should be supplied by an
external source. This can be a dedicated (temperature
compensated) crystal oscillator or be part of the baseband
The circuit is designed to operate from 3.0 V nominal
supplies. Separate ground connections are provided for
reduced parasitic coupling between different stages of the
circuit. There is a basic amount of RF supply decoupling
incorporated into the circuit.
The envelope is a leadless SOT750A package with a
plastic cap.
The interfacing to the baseband processor is very simple,
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.
2003 Aug 05

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