STATIC RAM. MB84VD2209xEA Datasheet

MB84VD2209xEA RAM. Datasheet pdf. Equivalent

Part MB84VD2209xEA
Description (MB84VD2208xEA / MB84VD2209xEA) 32M (X 8/X16) FLASH MEMORY & 2M (X 8/X16) STATIC RAM
Feature ( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50205-1E Stacked MCP (M.
Manufacture Fujitsu Media Devices
Datasheet
Download MB84VD2209xEA Datasheet

( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR D MB84VD2209xEA Datasheet
Recommendation Recommendation Datasheet MB84VD2209xEA Datasheet




MB84VD2209xEA
( DataSheet : www.DataSheet4U.com )
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50205-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
32M (× 8/×16) FLASH MEMORY &
2M (× 8/×16) STATIC RAM
MB84VD2208XEA-90/MB84VD2209XEA-90
s FEATURES
• Power supply voltage of 2.7 to 3.3V
• High performance
90 ns maximum access time (Flash)
85 ns maximum access time (SRAM)
• Operating Temperature
–25 to +85°C
• Package 73-ball FBGA
(Continued)
s PRODUCT LINE UP
Ordering Part No.
VCCf,
VCCs
=
3.0
V
+0.3 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
Flash Memory
SRAM
MB84VD2208XEA-90/MB84VD2209XEA-90
90 85
90 85
40 45
s PACKAGE
73-ball plastic FBGA
www.DataSheet4U.com
( BGA-73P-M01)
www.DataSheet4U.com



MB84VD2209xEA
MB84VD2208XEA-90/MB84VD2209XEA-90
(Continued)
1. FLASH MEMORY
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Minimum 100,000 write/erase cycles
• Sector erase architecture
Eight 4 K words and sixty three 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD2208XEA: Top sector
MB84VD2209XEA: Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCCf write inhibit 2.5 V
• Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2208XEA:SA69,SA70 MB84VD2209XEA:SA0,SA1)
At VIH, allows removal of boot sector protection
At VACC, program time will reduse by 40%.
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to “MBM29DL32XTE/BE” data sheet in detailed function
2. SRAM
• Power dissipation
Operating : 40 mA max.
Standby : 7 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 1.5 V to 3.3 V
• CE1s and CE2s Chip Select
• Byte data control: LBs (DQ0 to DQ7), UBs(DQ8 to DQ15)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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