STATIC RAM. MB84VD2002 Datasheet

MB84VD2002 RAM. Datasheet pdf. Equivalent

Part MB84VD2002
Description (MB84VD2002 / MB84VD2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM
Feature ( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50110-1E MCP (Multi-Chi.
Manufacture Fujitsu Media Devices
Datasheet
Download MB84VD2002 Datasheet

( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR D MB84VD2002 Datasheet
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MB84VD2002
( DataSheet : www.DataSheet4U.com )
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50110-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
8M (× 8/× 16) FLASH MEMORY &
2M (× 8) STATIC RAM
MB84VD2002-10/MB84VD2003-10
s FEATURES
• Power supply voltage of 2.7 to 3.6 V
• High performance
100 ns maximum access time
• Operating Temperature
–20 to +85°C
— FLASH MEMORY
• Simultaneous operations Read-while Erase or Read-while-Program
• Minimum 100,000 write/erase cycles
• Sector erase architecture
Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD2002: Top sector
MB84VD2003: Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCC write inhibit 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to "MBM29DL800TA/BA" data sheet in detailed function
— SRAM
• Power dissipation
Operating : 35 mA max.
Standby : 50 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 2.0 V to 3.6 V
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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MB84VD2002
MB84VD2002-10/MB84VD2003-10
s BLOCK DIAGRAM
A0 to A18
A-1
RESET
CEf
BYTE
A0 to A18
VCCf
VSS
8 M bit
Flash Memory
RY/BY
SA
WE
OE
CE1s
CE2s
A0 to A16
VCCs
VSS
2 M bit
Static RAM
DQ8 to DQ15
DQ0 to DQ7
s EXAMPLE OF CONNECTION WITH CHIPSET
A[0:19]
ROM_CS/
RAM_CS/
HWR/
LWR/
RD/
D[0:15]
CHIPSET
A[1:19]
A0
A[0:18]
SA
CEf
CE1s
VCCf
BYTE
RESET
RY/BY
Battery
Backup
Control
BATTERY BACKUP
VCCs
CE2s
WE
OE
D[0:15]
DQ[0:15]
MB84VD2002/3
2
VCC





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