MB84VD23280EA

( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-4E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 64M (×8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 s FEATURES Power supply voltage of 2.7 V to 3.3 V High performance 85 ns/90 ns maximum access time (Flash) 70 ns maximum access time (SRAM) Operating Temperature –25 °C to +85 °C Package 101-ball BGA (Continued) s PRODUCT LINEUP Flash Memory –85 Power Supply Voltage (V) Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) VCCf* = 3.0 V 85 85 35 –90 +0.3V –0.3 V SRAM VCCs* = 3.0 V +0.3V –0.3 V 90 90 70 70 35 *: Both VCCf and VCCs must be in recommended operation range when wither part is being accessed. s PACKAGE 101-pin plastic FBGA www.DataSheet4U.com BGA-101P-M01 www.DataSheet4U.com MB84VD23280EA/EE-85/90 (Continued) — FLASH MEMORY Simultaneous Read/Write operations (flex bank) Two virtual Banks are chosen from the combination of four physical banks Host system can program or erase in one bank, then read immediately and simultaneously read from the other bank between read and write operations Read-while-erase Read-while-program Minimum 100,000 write/erase cycles Sector erase architecture Sixteen 4 K words and one hundred twenty-six 32 K word. Any combination of sectors can be concurrently erased. Also supports full chip erase. Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or an...