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HY27UF082G2M

Hynix Semiconductor

(HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory

( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Doc...


Hynix Semiconductor

HY27UF082G2M

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( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Edit Pin Description table 2) Edit Data Protection texts 3) Add Read ID table 4) Add Marking Information 5) Add Application note 6) Change AC characteristics tCLS tCLH 0.1 Before After 10 0 5 10 tCS 15 0 tCH 5 10 tWP tALS 15 25 10 0 tDS 10 20 tDH 5 10 May. 23. 2005 Preliminary History Draft Date Dec. 2004 Remark Preliminary tWC tWH Before After 30 50 10 15 tRP 15 25 tRC 30 50 tREA tREH tCEA 18 35 10 20 23 45 1) Add ULGA Package. - Figures & texts are added. 2) Correct the test Conditions (DC Characteristics table) Test Conditions (ILI, ILO) Before After VIN=VOUT=0 to 3.6V VIN=VOUT=0 to Vcc (max) 0.2 3) Change AC Conditions table 4) Add tWW parameter ( tWW = 100ns, min) - Texts & Figures are added. - tWW is added in AC timing characteristics table. 5) Add tRBSY (Table12) - tRBSY (Dummy Busy Time for Cache Read) - tRBSY is 5us (typ.) - Figure 19,20 are edited. 6) Edit System Interface Using CE don’t care Figures. Aug. 09. 2005 Preliminary Rev 0.3 / Aug. 2005 1 www.DataSheet4U.com www.DataSheet4U.com Preliminary HY27UF(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Revision History Revision No. 7) Change AC characteristics tWH 0.2 Before After 20(4) 15 tR 25 30 tREA tOH tREH 35 30 15 10 20 15 Aug. 09. 2005 Preliminary -...




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