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STP6N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP6N60FI
s s s s s
VDSS 600 V
R DS(on) < 1.2 Ω
ID 3.8 A
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value 600 600 ± 20 3.8 2.4 24 40 0.32 2000 -65 to 150 150
Unit V V V A A A W W/o C V
o o
C C
(•) Pulse width limited by safe operating area
May 1993
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STP6N60FI
THERMAL DATA
R thj-case R thj-amb R thj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 3.12 62.5 0.5 300
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 6 370 17 3.7 Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V(BR)DSS I DS S I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A VGS = 0 Min. 600 250 1000 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V
T c = 125 o C
ON (∗)
Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 250 µ A T c = 100o C 6 Min. 2 Typ. 3 1 Max. 4 1.2 2.4 Unit V Ω Ω A
V GS = 10V I D = 3 A V GS = 10V I D = 3 A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol gfs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 3 A VGS = 0 Min. 2 Typ. 4.8 1150 160 75 1500 240 110 Max. Unit S pF pF pF
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STP6N60FI
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
S.