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NTF3055-100

ON Semiconductor

Power MOSFET

NTF3055-100, NVF3055-100 MOSFET – Power, N-Channel, SOT-223 3.0 A, 60 V Designed for low voltage, high speed switching ...


ON Semiconductor

NTF3055-100

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Description
NTF3055-100, NVF3055-100 MOSFET – Power, N-Channel, SOT-223 3.0 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage VDSS 60 Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS ± 20 ± 30 Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp ≤ 10 ms) ID 3.0 ID 1.4 IDM 9.0 Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C PD 2.1 1.3 0.014 Unit Vdc Vdc Vdc Vpk Adc Apk W W W/°C Operating and Storage Temperature Range TJ, Tstg − 55 °C to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RqJA RqJA TL 74 mJ °C/W 72.3 114 260 °C Stresses exceeding those listed in the Maximum Ratings t...




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