Power MOSFET
NTF3055-100, NVF3055-100
MOSFET – Power, N-Channel, SOT-223
3.0 A, 60 V
Designed for low voltage, high speed switching ...
Description
NTF3055-100, NVF3055-100
MOSFET – Power, N-Channel, SOT-223
3.0 A, 60 V
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supplies Converters Power Motor Controls Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 10 MW)
VDGR
60
Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms)
VGS
± 20
± 30
Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp ≤ 10 ms)
ID
3.0
ID
1.4
IDM
9.0
Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD
2.1
1.3
0.014
Unit Vdc Vdc
Vdc Vpk
Adc
Apk W W W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55
°C
to 175
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
EAS
RqJA RqJA
TL
74
mJ
°C/W 72.3 114
260 °C
Stresses exceeding those listed in the Maximum Ratings t...
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