Power MOSFET. NTF3055L108 Datasheet

NTF3055L108 MOSFET. Datasheet pdf. Equivalent

Part NTF3055L108
Description Power MOSFET
Feature NTF3055L108, NVF3055L108 MOSFET – Power, N-Channel, Logic Level, SOT-223 3.0 A, 60 V Designed for .
Manufacture ON Semiconductor
Datasheet
Download NTF3055L108 Datasheet

NTF3055L108, NVF3055L108 MOSFET – Power, N-Channel, Logic L NTF3055L108 Datasheet
Recommendation Recommendation Datasheet NTF3055L108 Datasheet




NTF3055L108
NTF3055L108,
NVF3055L108
MOSFET – Power,
N-Channel, Logic Level,
SOT-223
3.0 A, 60 V
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
VDSS
60
DraintoGate Voltage (RGS = 1.0 MW)
VDGR
60
GatetoSource Voltage
Continuous
Nonrepetitive (tp 10 ms)
VGS ± 15
± 20
Drain Current
Continuous @ TA = 25°C (Note 1)
Continuous @ TA = 100°C (Note 2)
Single Pulse (tp 10 ms)
ID 3.0
ID 1.4
IDM 9.0
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD 2.1
1.3
0.014
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg 55
to 175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
EAS
74 mJ
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJA
RqJA
°C/W
72.3
114
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
3.0 A, 60 V
RDS(on) = 120 mW
NChannel
D
G
S
4 SOT223
12
CASE 318E
STYLE 3
3
MARKING DIAGRAM
3055L = Device Code
A = Assembly Location
Y = Year
AYW
3055LG
G
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2019 Rev. 9
1
Publication Order Number:
NTF3055L108/D



NTF3055L108
NTF3055L108, NVF3055L108
1. When surface mounted to an FR4 board using 1pad size, 1 oz.
(Cu. Area 1 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 oz. (Cu. Area 0.272 in2).
www.onsemi.com
2





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