Power Amplifier. MRFIC1805 Datasheet

MRFIC1805 Amplifier. Datasheet pdf. Equivalent

Part MRFIC1805
Description 1.9GHz GaAs Power Amplifier
Feature .
Manufacture Motorola
Datasheet
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MRFIC1805 Datasheet
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MRFIC1805
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC1805/D
The MRFIC Line
1.9 GHz GaAs Power Amplifier
This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead
plastic package is designed for output or driver applications in 1.9 GHz PCS
handsets and basestations. The design is optimized for 3.0 Volt operation in
systems such as Japan’s PHS, Europe’s DECT and the emerging North
American PCS services. With modifications to the simple off–chip matching, the
device can be used in other applications from 1.5 to 2.5 GHz.
High Output Capability = 27 dBm Typical Psat
21.5 dBm Typical with PHS Format
High Gain = 21 dB Typical Small Signal, 20 dB at Pout = 22 dBm
Low Current Drain = 170 mA Typical with PHS Format
250 mA Typical with DECT Format
Low–Cost, Low Profile Plastic TSSOP Package
Order MRFIC1805R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
Device Marking = M1805
ABSOLUTE MAXIMUM RATINGS (TA = 25_ C unless otherwise noted)
Ratings
Supply Voltage
Supply Voltage
RF Input Power
Drain Current
Thermal Resistance, Junction to Air
Operating Junction Temperature
Ambient Operating Temperature
Storage Temperature
Symbol
VDD, VD1,
VD2
VSS
RFin
IDD
RθJA
TJ
TA
Tstg
MRFIC1805
1.9 GHz
POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 948C–03
(TSSOP–16)
Value
6
–4
+10
500
240
+175
–30 to +85
–65 to +125
Unit
Vdc
Vdc
dBm
mA
/W
_C
_C
_C
RF OUT/ RF OUT/
PCNTRL GND VD1 GND GND VD2 VD2 N/C
16 15 14 13 12 11 10
9
GATE
BIAS
12345678
VSS GND GND GND GND GND RF IN N/C
Pin Connections and Functional Block Diagram
REV 1
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www.DataSheet4U.com
MRFIC1805
1



MRFIC1805
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Supply Voltage
PA Control Voltage
RF Input Power
Operating Frequency Range
Symbol
VDD, VD1,
VD2
VSS
PCNTRL
Pin
fOP
Value
2.7 to 5
–2.5
0.0 to VDD
–20 to +10
1500 to 2200
Unit
Vdc
Vdc
Vdc
dBm
MHz
ELECTRICAL CHARACTERISTICS (VD1 = VD2 = 3 Vdc, Vss = –2.5 Vdc, TA= 25_ C, f = 1.9 GHz, Pin = +2 dBm, PCNTRL set for
IDQ = 125 mA, circuit configuration as shown in Figure 1)
Characteristic
Symbol Min Typ Max Unit
Power Output, Saturation
RF Output Power
Adjacent Channel Power Ratio (384 Kbps p /4 DQPSK Signal,
600 kHz Offset, Pout = 21 dBm
RF Output 1 dB Compression
2nd Harmonic Output
PSAT
Pout
PACP
P1dB
23 25
– dBm
20 21.5
– dBm
– –58 –55 dBc
22 24
– –40
– dBm
– dBc
3rd Harmonic Output
– – –40 – dBc
Supply Current
Supply Current
Supply Current
Input Return Loss
IDD
ISS
IPCNTRL
170 210 mA
200 300 µA
220 300 µA
13 – dB
Reverse Isolation
– – 31 – dB
Output Third Intercept
Turn On Time
– – 34 – dBm
– – 1 – ms
VDD
PCNTRL C3
C4 R1
T2
C2
16 15 14 13 12 11 10 9
C5
RF OUT
MRFIC1805
2
GATE
BIAS
12345678
C6
VSS
R1 – 22 W
C1 – 1.2 pF
C2 – 2.2 pF
C3, C6 – 330 pF
T1
C1
C4, C5, – 22 pF
T1 – 100 W Line, 7 mm
T2 – 100 W Line, 20 mm
Board Material – 30 MIL FR4
Connectors – SMA Type
Figure 1. Applications Circuit Configuration
RF IN
MOTOROLA RF DEVICE DATA





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