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P8M648YL Dataheets PDF



Part Number P8M648YL
Manufacturers SpecTek
Logo SpecTek
Description (P8M648YLx / P8M6416YLEx) 8M/16M x 64 DIMM SDRAM Module
Datasheet P8M648YL DatasheetP8M648YL Datasheet (PDF)

P8M648YL, P16M6416YL Preliminary Release V1 SDRAM MODULE Features: • • • • • • • • • P8M648YLE, P16M6416YLE 8M, 16M x 64 DIMM PC-100 and PC133 Compatible JEDEC – Standard 168-pin , dual in-line memory Module (DIMM) TSOP components. Single 3.3v +.3v power supply. Nonbuffered fully synchronous; all signals measured on positive edge of system clock. Internal pipelined operation; column address can be changed every clock cycle. Quad internal banks for hiding row access/precharge. 64ms 4096 cycle .

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P8M648YL, P16M6416YL Preliminary Release V1 SDRAM MODULE Features: • • • • • • • • • P8M648YLE, P16M6416YLE 8M, 16M x 64 DIMM PC-100 and PC133 Compatible JEDEC – Standard 168-pin , dual in-line memory Module (DIMM) TSOP components. Single 3.3v +.3v power supply. Nonbuffered fully synchronous; all signals measured on positive edge of system clock. Internal pipelined operation; column address can be changed every clock cycle. Quad internal banks for hiding row access/precharge. 64ms 4096 cycle refresh. All inputs, outputs, clocks LVTTL compatible. PIN PIN ASSIGNMENT (Front View) 168-Pin DIMM SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL Options: 8 - 8Mx8 SDRAM TSOP 16 - 8Mx8 SDRAM TSOP Embedded Resistor Versions 8 - 8Mx8 SDRAM TSOP 16 - 8Mx8 SDRAM TSOP Part Number: P8M648YL-XX P16M6416YL-XX P8M648YLE-XX P16M6416YLE-XX KEY DIMM MODULE TIMING PARAMETERS Module Component Clock CAS Marking Marking Frequency Latency -100CL3 -8A 100MHz 3 -133CL3 -75A 133MHz 3 GENERAL DESCRIPTION The P8M648YL, P8M648YLE, P16M6416YL, and P16M6416YLE are high performance dynamic randomaccess 64MB and 128MB modules respectively. These modules are organized in a x64 configuration, and utilize quad bank architecture with a synchronous interface. All signals are registered on the positive edge of the clock signals CK0 through CK3. Read and write accesses to the SDRAM are burst oriented; accesses start at a location and continue for a programmed number of locations in a sequence. Accesses begin with an ACTIVE command, which is followed by a READ or WRITE command. _______________________________________________ ABSOLUTE MAXIMUM RATINGS: Voltage on Vcc Supply relative to Vss...................-1 to +4.6V Operating Temperature TA (Ambient) .............25 ° to +70 °C Storage Temperature .........................................-55 to +125 ° Power Dissipation…………………………………………8 W Short Circuit Output Current…………………………..50 mA Stresses beyond these may cause permanent damage to the device. This is a stress rating only and functional operation of the device at or beyond these conditions is not implied. Exposure to these conditions for extended periods may affect reliability. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Vss DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 DQ8 Vss DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 NC NC Vss NC NC Vcc WE# DQMB0 DQMB1 S0# DU Vss A0 A2 A4 A6 A8 A10 BA1 Vcc Vcc CK0 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Vss DU S2# DQMB2 DQMB3 DU Vcc NC NC NC NC Vss DQ16 DQ17 DQ18 DQ19 Vcc DQ20 NC NC CKE1* Vss DQ21 DQ22 DQ23 Vss DQ24 DQ25 DQ26 DQ27 Vcc DQ28 DQ29 DQ30 DQ31 Vss CK2 NC WP SDA SCL Vcc 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 Vss DQ32 DQ33 DQ34 DQ35 Vcc DQ36 DQ37 DQ38 DQ39 DQ40 Vss DQ41 DQ42 DQ43 DQ44 DQ45 Vcc DQ46 DQ47 NC NC Vss NC NC Vcc CAS# DQMB4 DQMB5 S1#* RAS# Vss A1 A3 A5 A7 A9 BA0 A11 Vcc CK1 RFU 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Vss CKEO S3#* DQMB6 DQMB7 RFU Vcc NC NC NC NC Vss DQ48 DQ49 DQ50 DQ51 Vcc DQ52 NC NC NC Vss DQ53 DQ54 DQ55 Vss DQ56 DQ57 DQ58 DQ59 Vcc DQ60 DQ61 DQ62 DQ63 Vss CK3 NC SA0 SA1 SA2 Vcc *128Mb version only __________________________________________________________________________________________________ P8M648YL, P8M6416YL 1 SpecTek reserves the right to change products P8M648YLE, P8M6416YLE Rev: 02/20/01 or specifications without notice. ©2001 SpecTek P8M648YL, P16M6416YL Preliminary Release V1 P8M648YLE, P16M6416YLE Max 128MB 88 25 45 14 6 15 Units pF pF pF pF pF pF CAPACITANCE: (This parameter is sampled. VCC = +3.3V ± 0.3V; f = 1 MHz) Parameter Symbol Input Capacitance: A0 - A10, BAO, RAS#, CAS#, WE#, Input Capacitance: S0#-S3#, CK0-CK3 Input Capacitance: CKE0, CKE1, Input Capacitance: DQMB0#, DQMB7 Input Capacitance: SQL, SA0-SA2 Input/Output Capacitance: DQ0-DQ63, SDA Cl1 Cl2 Cl3 Cl4 Cl5 CIO 64MB 45 25 45 8 6 10 DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS: Parameter Symbol Min Supply Voltage Vcc/Vccq 3.0 Input High (Logic 1) Voltage, All inputs VIH 2.0 Input Low (Logic 0) Voltage, All inputs VIL -0.3 Input Leakage Current Any input = 0V < VIN < Vcc -10 II -20 All other pins not under test = 0V I2 -30 I3 Output Leakage Current DQs are disabled; 0V < VOUT < VccQ IOZ -10 Output High Voltage (IOUT = -4 mA) VOH 2.4 Output Low Voltage (IOUT = 4 mA) VOL Max 3.6 Vcc + .3 0.8 10 20 30 10 0.4 Units V V V uA uA V V ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vcc = 3.3V ± 10%V, Temp. = 25° to 70 °C Supply Current Symbol SIZE -75A -8A OPERATING CURRENT: ACTIVE mode, burst = 1, CL= 2 Icc1 64MB N/A N/A READ or WRITE, tRC > tRC (MIN), one bank active 128MB N/A N/A CL .


HEP1603 P8M648YL P8M6416YLE


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