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MRF150 Dataheets PDF



Part Number MRF150
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description N-CHANNEL MOS LINEAR RF POWER FET
Datasheet MRF150 DatasheetMRF150 Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF150/D The RF MOSFET Line RF Powe r Field-E ffec t Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) • Superior High Order IMD • IMD(d3) (150 W PEP) — – 32 dB (Typ) • IMD(d11) (150 W PEP) — – 60 dB (Typ) • 100% T.

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( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF150/D The RF MOSFET Line RF Powe r Field-E ffec t Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) • Superior High Order IMD • IMD(d3) (150 W PEP) — – 32 dB (Typ) • IMD(d11) (150 W PEP) — – 60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR MRF150 150 W, to 150 MHz N–CHANNEL MOS LINEAR RF POWER FET D G CASE 211–11, STYLE 2 S MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ± 40 16 300 1.71 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. www.DataSheet4U.com REV 9 1 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate–Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 — — — — — — 5.0 1.0 Vdc mAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) Forward Transconductance (VDS = 10 V, ID = 5.0 A) VGS(th) VDS(on) gfs 1.0 1.0 4.0 3.0 3.0 7.0 5.0 5.0 — Vdc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss — — — 400 240 40 — — — pF pF pF FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 30 MHz f = 150 MHz Gps η — — — 17 8.0 45 — — — dB % Drain Efficiency (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) dB IMD(d3) IMD(d11) ψ No Degradation in Output Power — — – 32 – 60 — — CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 3.0 A) GPS IMD(d3) IMD(d9 – 13) — — — 20 – 50 – 75 — — — dB NOTE: 1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L1 BIAS + 0 – 12 V – C5 R1 DUT T2 RF INPUT T1 R3 C1 R2 C2 C4 C3 RF OUTPUT C6 C7 C8 L2 + C9 + C10 – – 50 V C1 — 470 pF Dipped Mica C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or Monolythic with Short Leads C3 — 200 pF Unencapsulated Mica or Dipped Mica with Short Leads C4 — 15 pF Unencapsulated Mica or Dipped Mica with Short Leads C10 — 10 µF/100 V Electrolytic L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH L2 — Ferrite Bead(s), 2.0 µH R1, R2 — 51 Ω/1.0 W Carbon R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel T1 — 9:1 Broadband Transformer T2 — 1:9 Broadband Transformer Figure 1. 30 MHz Test Circuit (Class AB) REV 9 2 25 Pout , OUTPUT POWER (WATTS) 20 POWER GAIN (dB) VDD = 50 V 40 V 10 20 IDQ = 250 mA 100 50 00 250 200 150 100 50 0 40 V 0 1 2 3 4 Pin, INPUT POWER (WATTS) IDQ = 250 mA 5 6 15 10 VDD = 50 V IDQ = 250 mA Pout = 150 W (PEP) 30 5 VDD = 50 V 0 2 5 10 20 50 100 200 f, FREQUENCY (MHz) Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power IMD, INTERMODULATION DISTORTION (dB) – 30 – 35 – 40 – 45 – 50 150 MHz d3 d5 VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz – 30 – 35 – 40 – 45 – 50 0 20 40 60 80 30 MHz d3 d5 100 120 140 160 Pout, OUTPUT POWER (WATTS PEP) 1000 f T, UNITY GAIN FREQUENCY (MHz) VDS = 30 V 800 600 15 V 400 200 0 0 5 10 ID, DRAIN CURRENT (AMPS) 15 20 Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency versus Drain Current 10 IDS , DRAIN CURRENT (AMPS) 8 6 4 2 VDS = 10 V gfs = 5 mhos 0 2 4 6 8 10 0 VGS, GATE–SOURCE VOLTAGE (VOLTS) Figure 6. Gate Voltage versus Drain Current REV 9 3 30 MHz 150 MHz 250 200 150 150 90 136 f = 175 MHz 30 Zin 15 30 15 7.5 7.5 4.0 ZOL* 2.0 Zo = 10 Ω VDD = 50 V IDQ = 250 mA Pout = 150 W PEP ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 90 f = 175 MHz 4.0 2.0 NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC2 + 50 Vdc R1 C.


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