POWER TRANSISTOR. MRF15030 Datasheet

MRF15030 TRANSISTOR. Datasheet pdf. Equivalent

Part MRF15030
Description RF POWER TRANSISTOR
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF15030 Datasheet
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MRF15030
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF15030/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400 – 1600 MHz.
Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — – 30 dBc Max @ 30 Watts (PEP)
Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
VCE = 24 Vdc, IC = 2.5 Adc
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
Characterized with Small Signal S–Parameters from 1000 – 2000 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, RBE = 100 )
V(BR)CEO
V(BR)CES
V(BR)CER
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
25
60
30
REV 7
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MRF15030
30 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
Value
25
60
4
10
125
0.71
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Max Unit
1.40 °C/W
Typ Max Unit
29 — Vdc
64 — Vdc
52 — Vdc
(continued)
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MRF15030
1



MRF15030
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0)
V(BR)EBO
4
5 — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ICES
10 mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
hFE 20 35 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz)
Cob — 38 — pF
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Gpe 9.0 9.6 — dB
η 30 34 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IMD — – 34 – 30 dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IRL 12 15 — dB
Load Mismatch
(VCC = 28 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψ
No Degradation in Output Power
TYPICAL CHARACTERISTICS
45 10.3
40 Gpe
35
10.2
Pout 10.1
30 10.0
25 9.9
20 9.8
15 9.7
10 VCC = 26 Vdc
9.6
ICQ = 125 mA
5
f = 1490 MHz Single Tone
9.5
0 9.4
012345
Pin, INPUT POWER (WATTS)
Figure 1. Output Power & Power Gain versus Input Power
40
35
Pin = 3.5 W
30
25 2.5 W
20
1.5 W
15
10 VCC = 26 Vdc
ICQ = 125 mA
5 Single Tone
0
1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600
f, FREQUENCY (MHz)
Figure 2. Output Power versus Frequency
MRF15030
2
MOTOROLA RF DEVICE DATA





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