MRF15060

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier base station equipment. Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 10 dB Efficiency — 33% Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP) Output Power MRF15060 MRF15060S 60 W, 1.49 GHz RF POWER BIPOLAR TRANSISTORS CASE 451–04, STYLE 1 (MRF15060) CASE 451A–01, STYLE 1 (MF15060S) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current – Continuous Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Rating Thermal Resistance, Junction to Case Symbol RθJC Value 25 60 60 8 185 1.43 – 65 to +150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 0.7 Unit °C/W www.DataSheet4U.com ...