MRF1517T1

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1517/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. Specified Performance @ 520 MHz, 7.5 Volts D Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% Characterized with Series Equivalent Large–Signal Impedance Parameters Excellent Thermal Stability Capable of Handling 20:1 VSWR, @ 9.5 Vdc, G 520 MHz, 2 dB Overdrive Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request S RF Power Plastic Surface Mount Package Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1517T1 520 MHz, 8 W, 7.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 466–02, STYLE 1 (PLD–1.5) PLASTIC MAXIMUM RATINGS Rating Drain–Source Voltage (1) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (2) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 25 ± 20 4 62.5 0.50 – 65 to +150 150 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt appl...