MRF1511NT1

( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.5 volt portable FM equipment. D Specified Performance @ 175 MHz, 7.5 Volts Output Power — 8 Watts Power Gain — 11.5 dB Efficiency — 55% Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large−Signal G Impedance Parameters Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request RF Power Plastic Surface Mount Package S N Suffix Indicates Lead−Free Terminations Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1511NT1 MRF1511T1 175 MHz, 8 W, 7.5 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFET CASE 466−03, STYLE 1 PLD−1.5 PLASTIC Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value −0.5, +40 ± 20 4 62.5 0.5 − 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC ...