EFFECT TRANSISTOR. MRF1518T1 Datasheet

MRF1518T1 TRANSISTOR. Datasheet pdf. Equivalent


Part MRF1518T1
Description The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR
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MRF1518T1
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1518T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
D
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal
Impedance Parameters
G
RF Power Plastic Surface Mount Package
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
S
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Order this document
by MRF1518/D
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1)
Calculated
based
on
the
formula
PD
=
TJ TC
RθJC
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
40
± 20
4
62.5
0.50
– 65 to +150
150
Max
2
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
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MRF1518T1
1



MRF1518T1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0)
IDSS
1 µAdc
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0)
IGSS
1 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 100 µA)
VGS(th)
1.0
1.6
2.1 Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.4
— Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss — 66 — pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss — 33 — pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss — 4.5 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps 10 11 — dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η 50 55 — %
MRF1518T1
2
MOTOROLA RF DEVICE DATA





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