POWER MOSFET. MRF154 Datasheet

MRF154 MOSFET. Datasheet pdf. Equivalent


Part MRF154
Description N-CHANNEL BROADBAND RF POWER MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
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( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL MRF154 Datasheet
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF154 Datasheet
Recommendation Recommendation Datasheet MRF154 Datasheet




MRF154
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for linear large–signal output stages in the 2.0–100 MHz
frequency range.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
Order this document
by MRF154/D
MRF154
600 W, 50 V, 80 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
D
MAXIMUM RATINGS
G
CASE 368–03, STYLE 2
(HOG PAC)
S
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGO
VGS
ID
PD
125
125
±40
60
1350
7.7
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg –65 to +150
TJ 200
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.13
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
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MRF154
1



MRF154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 40 A)
Forward Transconductance (VDS = 10 V, ID = 20 A)
VGS(th)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
Gps
Drain Efficiency
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
η
Intermodulation Distortion
(VDD = 50 V, Pout = 600 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA)
IMD(d3)
Min
125
1.0
1.0
16
Typ
3.0
3.0
20
1600
950
175
17
45
–25
Max Unit
— Vdc
20 mAdc
5.0 µAdc
5.0 Vdc
5.0 Vdc
— mhos
— pF
— pF
— pF
— dB
—%
— dB
+
0ā-ā6 V -
R1
C5
C6
RF
INPUT
C1
C4
C3
C2
R2
L1
C7
DUT
L2 L3
+
C20 C21 50 V
-
C14 C15 C16
C17 C18 C19
C10 C11 C12
C13
C9
T1
RF
OUTPUT
C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47 µF, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1 µF
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039 µF
C21 — 10 µF/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2ID, 3/8Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801
C8
R1, R2 — 10 Ohms/2.0 W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See Motorola
T1 — Application Note AN749, Figure 4 for details.
T1 — Ferrite Material: 2 Each, Fair–Rite Products
T1 — Corp. #2667540001
All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.
Figure 1. 30 MHz Test Circuit
MRF154
2
MOTOROLA RF DEVICE DATA







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