POWER FET. MRF157 Datasheet

MRF157 FET. Datasheet pdf. Equivalent


Part MRF157
Description MOS LINEAR RF POWER FET
Feature ( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D .
Manufacture Tyco Electronics
Datasheet
Download MRF157 Datasheet


( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL MRF157 Datasheet
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF157 Datasheet
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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF1570T1 Datasheet
Recommendation Recommendation Datasheet MRF157 Datasheet




MRF157
( DataSheet : www.DataSheet4U.com )
SEMICONDUCTOR TECHNICAL DATA
The RF Power MOS Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed primarily for linear large–signal output stages to 80 MHz.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 21 dB (Typ)
Efficiency = 45% (Typ)
D
Order this document
by MRF157/D
MRF157
600 W, to 80 MHz
MOS LINEAR
RF POWER FET
G
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
CASE 368–03, STYLE 2
Value
125
125
±40
60
1350
7.7
–65 to +150
200
Max
0.13
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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MRF157
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 40 A)
Forward Transconductance (VDS = 10 V, ID = 20 A)
VGS(th)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 50 V, VGS = 0 V, f = 1.0 MHz)
Ciss
Output Capacitance
(VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
Gps
Drain Efficiency
(VDD = 50 V, Pout = 600 W, f = 30 MHz, IDQ = 800 mA)
h
Intermodulation Distortion
(VDD = 50 V, Pout = 600 W(PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 800 mA)
IMD(d3)
Min
125
1.0
1.0
16
15
40
Typ
3.0
3.0
24
1800
750
75
21
45
–25
Max Unit
— Vdc
20 mAdc
5.0 µAdc
5.0 Vdc
5.0 Vdc
— mhos
— pF
— pF
— pF
— dB
—%
— dB
+
0-6 V
-
R1 C5
C4
C6
D.U.T.
R2
L2
C15 C16 C17 C18
C20 C21
+
L3
C14 C19
+
50 V
-
RF
INPUT
L1 C7
C3
C1 C2
C10 C11 C12 C13
C9
T1
RF
OUTPUT
C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47 µF, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1 µF
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039 µF
C21 — 10 µF/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2ID, 3/8Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801
C8
R1, R2 — 10 Ohms/2W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See M/A-COM
T1 — Application Note AN749, Figure 4 for details.
T1 — Ferrite Material: 2 Each, Fair–Rite Products
T1 — Corp. #2667540001
All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.
Figure 1. 30 MHz Test Circuit
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