Effect Transistors. MRF1570FT1 Datasheet

MRF1570FT1 Transistors. Datasheet pdf. Equivalent


Part MRF1570FT1
Description RF Power Field Effect Transistors
Feature ( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by .
Manufacture Motorola
Datasheet
Download MRF1570FT1 Datasheet


( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR MRF1570FT1 Datasheet
Recommendation Recommendation Datasheet MRF1570FT1 Datasheet




MRF1570FT1
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1570T1/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
Specified Performance @ 470 MHz, 12.5 Volts
Output Power — 70 Watts
Power Gain — 10 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Broadband–Full Power Across the Band: 135–175 MHz
400–470 MHz
Broadband Demonstration Amplifier Information Available
Upon Request
Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF1570T1
MRF1570FT1
470 MHz, 70 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1366–03, STYLE 1
TO–272 SPLIT LEAD
PLASTIC
MRF1570T1
CASE 1366A–02, STYLE 1
TO–272 STRAIGHT LEAD
PLASTIC
MRF1570FT1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
40
± 20
165
0.5
– 65 to +150
175
Class
1 (Minimum)
M2 (Minimum)
C2 (Minimum)
Max
0.75
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
www.DaMMtoaOtSoTrhoeOlae,RtI4nOUc.L.2cA0o0mR2 F DEVICE DATA
www.DataSheet4U.com
MRF1570T1 MRF1570FT1
1



MRF1570FT1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 0.8 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
RF CHARACTERISTICS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA)
f = 470 MHz
Load Mismatch
(VDD = 15.6 Vdc, f = 470 MHz, 2 dB Input Overdrive, VSWR 20:1 at
All Phase Angles)
Symbol
Min Typ Max
Unit
IDSS
——
1
µA
VGS(th)
VDS(on)
1.0 —
——
3
1
Vdc
Vdc
Ciss
Coss
Crss
— — 500
— — 250
— — 35
pF
pF
pF
Gps dB
10 — —
η%
50 — —
Ψ No Degradation in Output Power
Before and After Test
MRF1570T1 MRF1570FT1
2
MOTOROLA RF DEVICE DATA







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)