KM644002B

( DataSheet : www.DataSheet4U.com ) KM644002B, KM644002BI Document Title 1Mx4 Bit (with OE) High Speed Static RAM(5V Operating), Operated at Commercial and Industrial Temperature Range. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet 1. Delete Preliminary 2. Add 30pF capacitive in test load 3. Relex DC characteristics Item ICC 10ns 12ns 15ns ISB f=max. Draft Data Jan. 1st 1997 Jun. 1st 1997 Remark Design Target Preliminary Rev. 2.0 Feb. 11th 1998 Final Previous 190mA 180mA 170mA 40mA Current 195mA 190mA 185mA 50mA Jun. 27th 1998 Final Rev.2.1 Change operating current at Industrial Temperature range. Previous spec. Changed spec. Items (10/12/15ns part) (10/12/15ns part) ICC 195/190/185mA 220/215/210mA The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 2.1 June 1998 www.DataSheet4U.com www.DataSheet4U.com KM644002B, KM644002BI 1M x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES Fast Access Time 10,12,15ns(Max.) Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS...