Static RAM. KM644002C Datasheet

KM644002C RAM. Datasheet pdf. Equivalent


Part KM644002C
Description 1M X 4 Bit (with Oe)high Speed CMOS Static RAM
Feature ( DataSheet : www.DataSheet4U.com ) KM644002C, KM644002CE, KM644002CI Document Title 1Mx4 Bit High .
Manufacture Samsung Semiconductor
Datasheet
Download KM644002C Datasheet


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KM644002C
( DataSheet : www.DataSheet4U.com )
KM644002C, KM644002CE, KM644002CI
Document Title
1Mx4 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo.
Rev. 0.0
Rev. 1.0
Rev. 2.0
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics
1.3 Changed ISB1 to 20mA
2.1 Relax D.C parameters.
Item
12ns
ICC 15ns
20ns
Previous
160mA
155mA
150mA
Current
190mA
185mA
180mA
Rev. 3.0
2.2 Relax Absolute Maximum Rating.
Item
Voltage on Any Pin Relative to Vss
Previous
-0.5 to 7.0
Current
-0.5 to Vcc+0.5
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
10ns
12ns
15ns
20ns
ICC
-
190mA
185mA
180mA
Previous
Isb
70mA
Isb1
20mA
ICC
160mA
150mA
140mA
130mA
Current
Isb
60mA
Isb1
10mA
3.3 Added Extended temperature range
PR
CMOS SRAM
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Aug. 19. 1999 Preliminary
Mar. 27. 2000 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 3.0
March 2000
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KM644002C
KM644002C, KM644002CE, KM644002CI
PR
CMOS SRAM
1M x 4 Bit (with OE)High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 10,12,15,20ns(Max.)
• Low Power Dissipation
Standby (TTL) : 60mA(Max.)
(CMOS) : 10mA(Max.)
Operating KM644002C - 10 : 160mA(Max.)
KM644002C - 12 : 150mA(Max.)
KM644002C - 15 : 140mA(Max.)
KM644002C - 20 : 130mA(Max.)
• Single 5.0V ±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
KM644002CJ : 32-SOJ-400
ORDERING INFORMATION
KM644002C - 10/12/15/20
KM644002CE - 10/12/15/20
KM644002CI - 10/12/15/20
Commercial Temp.
Extended Temp.
Industrial Temp.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
I/O1~I/O4
Data
Cont.
Pre-Charge Circuit
Memory Array
1024 Rows
1024 x 4 Columns
I/O Circuit
Column Select
CLK
Gen.
A10 A12 A14 A16 A18
A11 A13 A15 A17 A19
CS
WE
OE
GENERAL DESCRIPTION
The KM644002C is a 4,194,304-bit high-speed Static Random
Access Memory organized as 1,048,576 words by 4 bits. The
KM644002C uses 4 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNGs
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM644002C is packaged
in a 400 mil 32-pin plastic SOJ.
PIN CONFIGURATION(Top View)
A0 1
A1 2
A2 3
A3 4
A4 5
CS 6
I/O1 7
Vcc 8
Vss 9
I/O2 10
WE 11
A5 12
A6 13
A7 14
A8 15
A9 16
SOJ
32 A19
31 A18
30 A17
29 A16
28 A15
27 OE
26 I/O4
25 Vss
24 Vcc
23 I/O3
22 A14
21 A13
20 A12
19 A11
18 A10
17 N.C
PIN FUNCTION
Pin Name
A0 - A19
WE
CS
OE
I/O1 ~ I/O4
VCC
VSS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
-2-
Rev 3.0
March 2000







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