Effect Transistor. CEM4804 Datasheet

CEM4804 Transistor. Datasheet pdf. Equivalent

Part CEM4804
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature ( DataSheet : www.DataSheet4U.com ) CEM4804 PRELIMINARY Dual N-Channel Enhancement Mode Field Effe.
Manufacture Chino-Excel Technology
Datasheet
Download CEM4804 Datasheet

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CEM4804A Dual N-Channel Enhancement Mode Field Effect Transi CEM4804A Datasheet
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CEM4804
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CEM4804
PRELIMINARY
Dual N-Channel Enhancement Mode Field Effect Transistor
5 FEATURES
30V , 7.9A , RDS(ON)=20m@VGS=10V.
RDS(ON)=30m@VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
D1 D1 D2 D2
87 65
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa
-Pulsed
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
Ć7.9
Ć24
2
2
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
62.5
C/W
5-98
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CEM4804
CEM4804
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICSb
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance RDS(ON)
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICSc
ID(ON)
gFS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Condition
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS =Ć20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6.3A
VGS = 4.5V, ID = 5A
VDS = 5V, VGS = 10V
VDS =15V, ID = 6A
VDS =15V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGS = 10V,
RGEN = 6
VDS =10V, ID = 3.5A,
VGS =10V
Min TypC Max Unit
30 V
1 µA
Ć100 nA
1 3V
16 20 m
24 30 m
10
7
A
S
857 PF
343 PF
105 PF
22 45 ns
34 70 ns
43 90 ns
18 35 ns
28 35 nC
4 nC
7.5 nC
5-99
5





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