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IRF3808SPBF Dataheets PDF



Part Number IRF3808SPBF
Manufacturers International Rectifier
Logo International Rectifier
Description AUTOMOTIVE MOSFET
Datasheet IRF3808SPBF DatasheetIRF3808SPBF Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) PD - 95467 AUTOMOTIVE MOSFET Typical Applications ● ● ● IRF3808SPbF IRF3808LPbF D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Lead-Free Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.007Ω S Benefits ● ● ● ● ● ● G ID = 106A† Description Absolute Maximum Ratings ID @ TC = 25°C.

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( DataSheet : www.DataSheet4U.com ) PD - 95467 AUTOMOTIVE MOSFET Typical Applications ● ● ● IRF3808SPbF IRF3808LPbF D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Lead-Free Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.007Ω S Benefits ● ● ● ● ● ● G ID = 106A† Description Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications. Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy‡ Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds D2Pak IRF3808S TO-262 IRF3808L Max. 106† 75 † 550 200 1.3 ± 20 430 82 See Fig.12a, 12b, 15, 16 5.5 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted, Steady State)** Typ. ––– ––– Max. 0.75 40 Units °C/W HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 6/30/04 www.DataSheet4U.com www.DataSheet4U.com IRF3808S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance … Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. 75 ––– ––– 2.0 100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.086 5.9 ––– ––– ––– ––– ––– ––– 150 31 50 16 140 68 120 4.5 7.5 5310 890 130 6010 570 1140 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 7.0 mΩ VGS = 10V, ID = 82A „ 4.0 V VDS = 10V, ID = 250µA ––– S VDS = 25V, ID = 82A 20 VDS = 75V, VGS = 0V µA 250 VDS = 60V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V 220 ID = 82A 47 nC VDS = 60V 76 VGS = 10V„ ––– VDD = 38V ––– ID = 82A ns ––– RG = 2.5Ω ––– VGS = 10V „ D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 60V Source-Drain Ratings and Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Starting TJ = 25°C, L = 0.130mH RG = 25Ω, IAS = 82A. (See Figure 12). ƒ ISD ≤ 82A, di/dt ≤ 310A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. Conditions D MOSFET symbol ––– ––– 106† showing the A G integral reverse ––– ––– 550 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 82A, VGS = 0V „ ––– 93 140 ns TJ = 25°C, IF = 82A ––– 340 510 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) … Coss eff. is a fixed capacitance that gives the same charging time † Calculated continuous current based on maximum allowable ‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. junction temperature. Package limitation current is 75A. as Coss while VDS is rising from 0 to 80% VDSS . 2 www.irf.com IRF3808S/LPbF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) BOTTOM BOTTOM VGS 15V 10V 8.0.


A2Y5 IRF3808SPBF AT41435


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