AUTOMOTIVE MOSFET. IRF3808SPBF Datasheet

IRF3808SPBF MOSFET. Datasheet pdf. Equivalent


Part IRF3808SPBF
Description AUTOMOTIVE MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) PD - 95467 AUTOMOTIVE MOSFET Typical Applications ● ● ● IRF38.
Manufacture International Rectifier
Datasheet
Download IRF3808SPBF Datasheet


( DataSheet : www.DataSheet4U.com ) PD - 95467 AUTOMOTIVE IRF3808SPBF Datasheet
Recommendation Recommendation Datasheet IRF3808SPBF Datasheet




IRF3808SPBF
( DataSheet : www.DataSheet4U.com )
PD - 95467
IRF3808SPbF
AUTOMOTIVE MOSFET IRF3808LPbF
Typical Applications
Integrated Starter Alternator
HEXFET® Power MOSFET
42 Volts Automotive Electrical Systems
Lead-Free
Benefits
D
VDSS = 75V
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
RDS(on) = 0.007
G
S ID = 106A†
Repetitive Avalanche Allowed up to Tjmax
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low RθJC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
D2Pak
TO-262
use in higher power Automotive electronic systems and a wide
IRF3808S
IRF3808L
variety of other applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106†
75†
550
200
1.3
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, Steady State)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
6/30/04
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IRF3808SPBF
IRF3808S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
Min. Typ. Max.
75 ––– –––
––– 0.086 –––
––– 5.9 7.0
2.0 ––– 4.0
100 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 150 220
––– 31 47
––– 50 76
––– 16 –––
––– 140 –––
––– 68 –––
––– 120 –––
––– 4.5 –––
LS Internal Source Inductance
––– 7.5 –––
Ciss Input Capacitance
––– 5310 –––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 890 –––
––– 130 –––
Coss
Coss
Output Capacitance
Output Capacitance
––– 6010 –––
––– 570 –––
Coss eff.
Effective Output Capacitance …
––– 1140 –––
Source-Drain Ratings and Characteristics
Units
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 82A „
VDS = 10V, ID = 250µA
VDS = 25V, ID = 82A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 82A
VDS = 60V
VGS = 10V„
VDD = 38V
ID = 82A
RG = 2.5
VGS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.130mH
RG = 25, IAS = 82A. (See Figure 12).
ƒ ISD 82A, di/dt 310A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
2
Min. Typ. Max. Units
Conditions
––– ––– 106†
––– ––– 550
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 82A, VGS = 0V „
––– 93 140
––– 340 510
ns TJ = 25°C, IF = 82A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
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