POWER MOSFET. STT3PF20V Datasheet

STT3PF20V MOSFET. Datasheet pdf. Equivalent


Part STT3PF20V
Description P-CHANNEL POWER MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STri.
Manufacture ST Microelectronics
Datasheet
Download STT3PF20V Datasheet


( DataSheet : www.DataSheet4U.com ) STT3PF20V P-CHANNEL 20V STT3PF20V Datasheet
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STT3PF20V
( DataSheet : www.DataSheet4U.com )
STT3PF20V
P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L
2.7-DRIVE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STT3PF20V
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s TYPICAL RDS(on) = 0.14 W (@4.5V)
s TYPICAL RDS(on) = 0.20 W (@2.7V)
s ULTRA LOW THRESHOLD GATE DRIVE
(2.7V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s CELLULAR
MARKING
s STP2
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kW)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(œ)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(œ) Pulse width limited by safe operating area.
October 2002
.
Value
Unit
20 V
20 V
± 12 V
2.2 A
1.39
A
8.8 A
1.6 W
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
1/8
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STT3PF20V
STT3PF20V
THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board
Max 78
-55 to 150
-55 to 150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 12 V
Max.
1
10
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 4.5 V
VGS = 2.7 V
ID = 1 A
ID = 1 A
Min.
0.6
Typ.
0.14
0.20
Max.
0.20
0.25
Unit
V
W
W
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS=15 V
ID = 1 A
VDS = 15V f = 1 MHz, VGS = 0
Min.
Typ.
4
315
87
17
Max.
Unit
S
pF
pF
pF
2/8







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