POWER MOSFET. STT3PF30L Datasheet

STT3PF30L MOSFET. Datasheet pdf. Equivalent


Part STT3PF30L
Description P-CHANNEL POWER MOSFET
Feature ( DataSheet : www.DataSheet4U.com ) P-CHANNEL 30V - 0.14 Ω - 3A SOT23-6L STripFET™ II POWER MOSFET .
Manufacture ST Microelectronics
Datasheet
Download STT3PF30L Datasheet


( DataSheet : www.DataSheet4U.com ) P-CHANNEL 30V - 0.14 Ω STT3PF30L Datasheet
Recommendation Recommendation Datasheet STT3PF30L Datasheet




STT3PF30L
( DataSheet : www.DataSheet4U.com )
STT3PF30L
P-CHANNEL 30V - 0.14 - 3A SOT23-6L
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STT3PF30L
30 V
<0.165
3A
s TYPICAL RDS(on) = 0.14
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
s CELLULAR
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
s STA3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
September 2002
.
Value
Unit
30 V
30 V
± 16 V
2.4 A
1.5 A
10 A
1.6 W
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
1/8
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STT3PF30L
STT3PF30L
THERMAL DATA
Rthj-amb
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
(**)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board
Max 78
Max 156
-55 to 150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
Max.
1
10
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 1.5 A
ID = 1.5 A
Min.
1
Typ.
1.6
0.14
0.16
Max.
2.5
0.165
0.2
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS=25 V
ID = 1.5 A
VDS = 25V f = 1 MHz, VGS = 0
Min.
Typ.
4
420
95
30
Max.
Unit
S
pF
pF
pF
2/8







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