Mode MOSFET. SDM9435A Datasheet

SDM9435A MOSFET. Datasheet pdf. Equivalent


SamHop Microelectronics SDM9435A
( DataSheet : www.DataSheet4U.com )
S DM9435A
S amHop Microelectronics C orp.
May ,2004 ver 1.1
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID R DS (ON) ( m W ) Max
-30V
-5A
50 @ VGS = -10V
90 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
DDDD
8 7 65
5
S O-8
1
1 234
S SS G
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
20
-5
-25
-1.7
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
50
C /W
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SDM9435A Datasheet
Recommendation SDM9435A Datasheet
Part SDM9435A
Description P-Channel Enhancement Mode MOSFET
Feature SDM9435A; ( DataSheet : www.DataSheet4U.com ) S DM9435A S amHop Microelectronics C orp. May ,2004 ver 1.1 P.
Manufacture SamHop Microelectronics
Datasheet
Download SDM9435A Datasheet




SamHop Microelectronics SDM9435A
S DM9435A
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 20V, VDS =0V
V
-1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.5 -3 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS = -10V, ID =-5.3A
VGS = -4.5V, ID = -4.2A
40 50 m-ohm
67 90 m-ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = -5V, VGS = -10V
VDS =-15V, ID = - 5.3A
-20
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
VDS =-15V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) VD = -15V
tr
ID = -1A
VGEN = - 10V
tD(OFF) R GEN = 6 ohm
Fall Time
tf
Total Gate Charge
Qg VDS =-15V,ID =-5.3A,VGS =-10V
VDS =-15V,ID =-5.3A,VGS =-4.5V
9
860
470
180
9
10
37
23
15
8.7
A
S
PF
PF
PF
ns
ns
ns
ns
nC
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =-15V, ID = -5.3A
Qgd VGS =-10V
3 nC
4 nC
2



SamHop Microelectronics SDM9435A
S DM9435A
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD VGS = 0V, Is =-1.7A
Min Typ C Max Unit
-0.84 -1.3 V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25
20
-V GS =10,9,8,7,6,5V
15
-V GS =4V
10
-V GS =3V
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
20
-55 C
25 C
16
T j=125 C
12
8
4
0
0 0.5 1 1.5 2 2.5 3
-V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
3000
2500
2000
1500
1000
500
0
0
5 10 15
C is s
C oss
C rss
20 25 30
-V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
1.8
V GS =-10V
1.6 ID=-5.3A
1.4
1.2
1.0
0.8
0.6
-50 0 50 100 150
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
5
3







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