SDM9410

( DataSheet : www.DataSheet4U.com ) S DM9410 S amHop Microelectronics C orp. P R E LIMINAR Y N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) MAX ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 10V 50 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300ms Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 7 28 2.8 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 www.DataSheet4U.com www.DataSheet4U.com S DM9410 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 7A V GS = 4.5V,ID = 3.5A V DS = 5V, V GS = 10V V DS = 5V, ID = 7A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.8 3 30 50 30 12 510 235 56 21 20 27 115 13 6.5 2 2.3 40 40 55 230 20 10 V m ohm m ohm ON CHAR ACTE R IS ...