Mode MOSFET. SDM9410 Datasheet

SDM9410 MOSFET. Datasheet pdf. Equivalent


SamHop Microelectronics SDM9410
( DataSheet : www.DataSheet4U.com )
S DM9410
S amHop Microelectronics C orp.
P R E LIMINAR Y
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
30V
ID R DS (ON) ( m W ) MAX
30 @ VGS = 10V
7A
50 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-Pulsedb (300ms Pulse Width)
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
20
7
28
2.8
2.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
50
C /W
1
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SDM9410 Datasheet
Recommendation SDM9410 Datasheet
Part SDM9410
Description N-Channel Enhancement Mode MOSFET
Feature SDM9410; ( DataSheet : www.DataSheet4U.com ) S DM9410 S amHop Microelectronics C orp. P R E LIMINAR Y N-C .
Manufacture SamHop Microelectronics
Datasheet
Download SDM9410 Datasheet




SamHop Microelectronics SDM9410
S DM9410
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS VGS =0V, ID =250uA
30
V
Zero Gate Voltage Drain Current
IDSS VDS =24V, VGS =0V
1 uA
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 20V, VDS =0V
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.8 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =7A
VGS = 4.5V,ID= 3.5A
30 m ohm
50 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 5V, VGS = 10V
VDS = 5V, ID =7A
30
12
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS c
C IS S
COSS
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
510 PF
235 PF
56 PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V,
tr ID = 1A,
tD(O F F )
VGS = 10V,
R GEN = 10 ohm
tf
21 40 ns
20 40 ns
27 55 ns
115 230 ns
Total Gate Charge
Qg VDS =15V, ID =1A,VGS =10V
VDS =15V, ID =1A,VGS =4.5V
13 20 nC
6.5 10 nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =15V, ID = 1A,
Qgd VGS =10V
2 nC
2.3 nC
2



SamHop Microelectronics SDM9410
S DM9410
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
VSD VGS = 0V, Is =5.3A
Min TypC Max Unit
0.76 1.1 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
V GS =10,9,8,7,6,5,4V
20
15
10
V GS =3V
5
0
0 0.5 1
1.5 2
2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
25
20
25 C
15
10 T j=125 C
5
-55 C
0
0.0 1.0
2.0 3.0
4.0 5.0 6.0
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
1200
1000
800
600
C is s
400
C oss
200
C rss
0
0 5 10 15 20 25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
0.030
0.025
V GS =10V
0.020
0.015
0.010
0.005
T j=125 C
25 C
-55 C
0
0 5 10 15 20
ID, Drain C urrent(A)
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3







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