STP36NE06FP

( DataSheet : www.DataSheet4U.com ) ® STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP36NE06 STP36NE06FP s s s s s V DSS 60 V 60 V R DS(on) < 0.040 Ω < 0.040 Ω ID 36 A 20 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 3 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP36NE06 V DS V DGR V GS ID ID IDM ( ) P tot V ISO dv/dt T stg Tj July 1998 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Unit STP36NE06FP 60 60 ± 20 V V V 20 14 144 35 0.27 2000 7 A A A W W/ o C V V/ns o o 36 24 144 1...