MTP10N10EL

MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Features Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1) VDSS VDGR VGS VGSM ID ID IDM PD 100 Vdc 100 Vdc ± 15 Vdc ± 20 Vpk 10 Adc 6.0 35 Apk 40 Watts 0.32 W/°C 1.75 Watts Operating and Storage Temperature Range TJ, Tstg − 55 to °C 150 Single Pulse Drain−to−Source Avalanche EAS mJ En...