Dynamic RAM. K4F641612E Datasheet

K4F641612E RAM. Datasheet pdf. Equivalent


Samsung semiconductor K4F641612E
( DataSheet : www.DataSheet4U.com )
Industrial Temperature
K4F661612E, K4F641612E
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs
advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4F661612E-TI/P(3.3V, 8K Ref.)
- K4F641612E-TI/P(3.3V, 4K Ref.)
Active Power Dissipation
Speed
-45
-50
-60
8K
324
288
252
Unit : mW
4K
468
432
396
Refresh Cycles
Part
NO.
K4F661612E*
K4F641612E
Refresh
cycle
8K
4K
Refresh time
Normal L-ver
64ms 128ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS -before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Performance Range
Speed
-45
tRAC
45ns
tCAC
12ns
-50 50ns 13ns
-60 60ns 15ns
tRC
80ns
90ns
110ns
tPC
31ns
35ns
40ns
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V ±0.3V power supply
Industrial Temperature operating ( -40~85°C )
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
4,194,304 x 16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
D Q8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
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K4F641612E Datasheet
Recommendation K4F641612E Datasheet
Part K4F641612E
Description (K4F641612E / K4F661612E) 4M x 16bit CMOS Dynamic RAM
Feature K4F641612E; ( DataSheet : www.DataSheet4U.com ) Industrial Temperature K4F661612E, K4F641612E 4M x 16bit CMOS D.
Manufacture Samsung semiconductor
Datasheet
Download K4F641612E Datasheet




Samsung semiconductor K4F641612E
Industrial Temperature
K4F661612E, K4F641612E
PIN CONFIGURATION (Top Views)
K4F661612E-T
K4F641612E-T
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
N.C
VCC
W
RAS
N.C
N.C
N.C
N.C
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50 VSS
49 DQ15
48 DQ14
47 DQ13
46 DQ12
45 VSS
44 DQ11
43 DQ10
42 DQ9
41 DQ8
40 N.C
39 VSS
38 LCAS
37 UCAS
36 OE
35 N.C
34 N.C
33 A12(N.C)*
32 A11
31 A10
30 A9
29 A8
28 A7
27 A6
26 VSS
(400mil TSOP(II))
*(N.C) : N.C for 4K Refresh Product
Pin Name
A0 - A12
A0 - A11
DQ0 - 15
VS S
RAS
UCAS
LCAS
W
OE
VCC
N.C
Pin function
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
Data Output Enable
Power(+3.3V)
No Connection
CMOS DRAM



Samsung semiconductor K4F641612E
Industrial Temperature
K4F661612E, K4F641612E
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Symbol
VIN, VO U T
Rating
-0.5 to +4.6
Units
V
Voltage on VCC supply relative to V SS
Storage Temperature
VCC
Tstg
-0.5 to +4.6
-55 to +150
V
°C
Power Dissipation
Short Circuit Output Current
PD
IOS Address
1
50
W
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= -40 to 85°C)
Parameter
Symbol
Min
Typ
Max
Supply Voltage VC C 3.0 3.3 3.6
Ground
VSS 0
00
Input High Voltage
VIH
2.0
Input Low Voltage
V IL
-0.3 * 2
*1 : Vcc+1.3V at pulse width 15ns which is measured at VCC
*2 : -1.3 at pulse width 15ns which is measured at VSS
- Vcc+0.3*1
- 0.8
Units
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Input Leakage Current (Any input 0VINVCC+0.3V,
all other pins not under test=0 Volt)
Symbol
II(L)
Min
-5
Max
5
Units
uA
Output Leakage Current
(Data out is disabled, 0VVOUTVCC )
IO(L)
-5
5 uA
Output High Voltage Level(IOH=-2mA)
Output Low Voltage Level(IOL=2mA)
VOH
VO L
2.4
-
-V
0.4 V







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