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MOSFET. 2SK3564 Datasheet

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MOSFET. 2SK3564 Datasheet






2SK3564 MOSFET. Datasheet pdf. Equivalent




2SK3564 MOSFET. Datasheet pdf. Equivalent





Part

2SK3564

Description

MOSFET



Feature


( DataSheet : www.DataSheet4U.com ) TEN TATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 2SK3564 unit Switching Regula tor Applications 10±0.3 φ3.2±0.2 2.7 ±0.2 Maximum Ratings (Ta = 25°C) Cha racteristics Drain-source voltage Drain -gate voltage (RGS = 20 kΩ) Gate-sour ce voltage DC Drain current (Note 1) Sy mbol VDSS VDGR VGSS ID IDP.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3564 Datasheet


Toshiba Semiconductor 2SK3564

2SK3564; PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 TBD 3 4.0 150 -55~150 A W m J A mJ °C °C Unit 0.69±0.15 2.8Max V V V 2.54±0.25 0.64±0.15 2.54±0.25 1 2 3 2.6 12.5 Min. 4.5±0.2 1.1 1 .1 Pulse (t = 1 ms) (Note 1) Drain po wer dissipation (Tc = 25°C) Single pul se avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (No te 3) Channel temperature S.


Toshiba Semiconductor 2SK3564

torage temperature range 1. 2. 3. Gate Drain Source JEDEC JEITA TOSHIBA The rmal Characteristics Characteristics Th ermal resistance, channel to case Therm al resistance, channel to ambient Symbo l Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W 15.0±0.3 • • • Low drain-source ON resistance: RDS (ON) = 3.7 (typ.) High forward tran sfer admittance: |Yfs| = 2.6 .


Toshiba Semiconductor 2SK3564

S (typ.) A (VDS = 720 V) Low leakage cur rent: IDSS = 100 Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 3. 9 3.0 2 Note 1: Please use devices on conditions that the channel temperatur e is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.0 A, R G = 25 Ω Note 3: Repetitive rating: P ulse width limited by maximum channel t emperature This transi.

Part

2SK3564

Description

MOSFET



Feature


( DataSheet : www.DataSheet4U.com ) TEN TATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 2SK3564 unit Switching Regula tor Applications 10±0.3 φ3.2±0.2 2.7 ±0.2 Maximum Ratings (Ta = 25°C) Cha racteristics Drain-source voltage Drain -gate voltage (RGS = 20 kΩ) Gate-sour ce voltage DC Drain current (Note 1) Sy mbol VDSS VDGR VGSS ID IDP.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK3564 Datasheet




 2SK3564
( DataSheet : www.DataSheet4U.com )
TENTATIVE
2SK3564
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3564
Switching Regulator Applications
unit
Low drain-source ON resistance: RDS (ON) = 3.7 (typ.)
High forward transfer admittance: |Yfs| = 2.6 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 720 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
10±0.3
φ3.2±0.2
2.7±0.2
Maximum Ratings (Ta = 25°C)
1.1
1.1
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
DC (Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
Rating
900
900
±30
3
9
40
TBD
Unit
V
V
0.69±0.15
2.54±0.25
2.54±0.25
V 123
A
1. Gate
W 2. Drain
3. Source
mJ
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
IAR
EAR
Tch
3A
4.0 mJ
150 °C JEDEC
Storage temperature range
Tstg
-55~150
°C
JEITA
Thermal Characteristics
TOSHIBA
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.0 A, RG = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
www.DataSheet4U.com
1
2003-02-14




 2SK3564
TENTATIVE
2SK3564
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±30 V, VDS = 0 V
IG 10 µA, VGS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1.5 A
VDS = 20 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
4.7
ID = 1.5 A VOUT
RL =
133
VDD ∼− 200 V
Duty <= 1%, tw = 10 µs
±30
900
2.0
0.65
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 3 A
Qgd
Typ.
3.7
2.6
700
15
75
20
60
35
125
17
10
7
Max
±10
100
4.0
4.3
Unit
µA
V
µA
V
V
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
 3 A
 9 A
  −1.9 V
850
ns
4.7  µC
2 2003-02-14




 2SK3564
2SK3564
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
3 2003-02-14






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