Switching diode
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1SS133
Diodes
Switching diode
1SS133
!Applications High speed switching !External dimensions (Unit...
Description
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1SS133
Diodes
Switching diode
1SS133
!Applications High speed switching !External dimensions (Units : mm)
CATHODE BAND (YELLOW) φ0.4±0.1
!Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability.
29.0±1.0
2.7±0.3
29.0±1.0
φ1.8±0.2
ROHM : MSD EIAJ : − JEDEC : DO-34
!Construction Silicon epitaxial planar
!Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 −65~+175 Unit V V mA mA mA mW
°C °C
!Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. − − − − Typ. − − − − Max. 1.2 0.5 2 4 Unit V µA pF ns IF=100mA VR=80V VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=50Ω Conditions
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1SS133
Diodes
!Electrical characteristics curves (Ta=25°C)
CAPACITANCE BETWEEN TERMINALS : CT(pF)
100 50
FORWARD CURRENT : IF (mA)
3.0 f=1MHz 2.5 2.0 1.5 1.0 0.5 0 0
3000
REVERSE CURRENT : IR (nA)
100˚C 70˚C
20 10 5 2 1 0.5 0.2 0
Ta=12 5˚C Ta=75 ˚C Ta=25˚C Ta=−25 ˚C
1000 300
50˚C
100 30 10 3
Ta=25˚C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100 120
5
10
15
20
25
30
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fi...
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