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2SK1762. K1762 Datasheet

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2SK1762. K1762 Datasheet







K1762 2SK1762. Datasheet pdf. Equivalent




K1762 2SK1762. Datasheet pdf. Equivalent





Part

K1762

Description

2SK1762

Manufacture

Hitachi Semiconductor

Datasheet
Download K1762 Datasheet


Hitachi Semiconductor K1762

K1762; 2SK1762 Silicon N-Channel MOS FET Appli cation www.DataSheet4U.com High speed power switching Features • • • ⠀˘ • Low on-resistance High speed swi tching Low drive current No secondary b reakdown Suitable for switchingregulato r, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1762 Absolute Maximum Ratings ( Ta = 25°C) Item Drain to sou.


Hitachi Semiconductor K1762

rce voltage Gate to source voltage Drain current Drain peak current Body to dra in diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, du ty cycle ≤ 1 % www.DataSheet4U.com 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 12 48 12 35 150 –55 to +150 Unit V V A A A W °.


Hitachi Semiconductor K1762

C °C 2 2SK1762 Electrical Characteris tics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakd own voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 Âą30 — — 2.0 — 5.0 — — — ⠀” — — — — — Typ — — — — — 0.23 8.0 1100 440 68 20 65 100 44 1.0 200 Max — — Âą10 250 3.0 0.3 5 — — — — — — — — — — Unit V V ÂľA ÂľA V Ω S pF pF pF ns ns ns.



Part

K1762

Description

2SK1762

Manufacture

Hitachi Semiconductor

Datasheet
Download K1762 Datasheet




 K1762
2SK1762
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator, DC-DC converter
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S





 K1762
2SK1762
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
www.DataNSohteeest4U1..coPmW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
250
Âą30
12
48
12
35
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2





 K1762
2SK1762
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
250
Gate to source breakdown
voltage
V(BR)GSS
Âą30
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
2.0
—
www.DataFSohrweeat4rdU.tcraonmsfer admittance |yfs|
5.0
Typ
—
—
—
—
—
0.23
8.0
Max
—
—
Âą10
250
3.0
0.35
—
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
—
—
—
1100
440
68
20
65
100
44
1.0
—
—
—
—
—
—
—
—
200 —
Unit
V
V
ÂľA
ÂľA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = Âą100 ÂľA, VDS = 0
VGS = Âą25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 6 A
VGS = 10 V*1
ID = 6 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 6 A
VGS = 10 V
RL = 5 Ω
IF = 12 A, VGS = 0
IF = 12 A, VGS = 0,
diF / dt = 100 A / Âľs
See characteristic curves of 2SK1761.
3



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