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MOS FET. 2SJ181 Datasheet







2SJ181 FET. Datasheet pdf. Equivalent






Part

2SJ181

Description

(2SJ181 / 2SJ182) Silicon P-Channel MOS FET

Manufacture

Hitachi Semiconductor

Datasheet
Download 2SJ181 Datasheet


Hitachi Semiconductor 2SJ181

2SJ181; ( DataSheet : www.DataSheet4U.com ) 2SJ 181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power swit ching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown S uitable for switching regulator and DC- DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4.


Hitachi Semiconductor 2SJ181

U.com 2SJ181(L), 2SJ181(S) Absolute Max imum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body t o drain diode reverse drain current Cha nnel dissipation Channel temperature St orage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ra tings –600 ±15 –0.5 –1.0 –0.5 2 0 150 –55 to +150 Unit V V A A A W C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown volta ge Gate to source leak current Symbol M in V(BR)DSS V(BR)GSS I GSS –600 ±15 — — –2.0 — 0.3 — — — — — — — — — Typ — — — — — 15 0.45 220 55 13 7 20 35 35 –0.85 230 Max — — ±10 –100 –4.0 25 — .



Part

2SJ181

Description

(2SJ181 / 2SJ182) Silicon P-Channel MOS FET

Manufacture

Hitachi Semiconductor

Datasheet
Download 2SJ181 Datasheet




 2SJ181
( DataSheet : www.DataSheet4U.com )
2SJ181(L), 2SJ181(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
www.DataSheet4U.com





 2SJ181
2SJ181(L), 2SJ181(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
–600
±15
–0.5
–1.0
–0.5
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –600
Gate to source breakdown
voltage
V(BR)GSS ±15
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–2.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
0.3
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max
——
——
±10
— –100
— –4.0
15 25
0.45
220
55
13
7
20
35
35
–0.85
230 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = –500 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –0.3 A, VGS = –10 V*1
ID = –0.3 A, VDS = –20 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –0.3 A, VGS = –10 V,
RL = 100
IF = –0.5 A, VGS = 0
IF = –0.5 A, VGS = 0,
diF/dt = 50 A/µs
2



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