2SJ181(L), 2SJ181(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
–600
±15
–0.5
–1.0
–0.5
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –600
Gate to source breakdown
voltage
V(BR)GSS ±15
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–2.0
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
0.3
—
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ Max
——
——
— ±10
— –100
— –4.0
15 25
0.45
220
55
13
7
20
35
35
–0.85
—
—
—
—
—
—
—
—
—
230 —
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = –500 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –0.3 A, VGS = –10 V*1
ID = –0.3 A, VDS = –20 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –0.3 A, VGS = –10 V,
RL = 100 Ω
IF = –0.5 A, VGS = 0
IF = –0.5 A, VGS = 0,
diF/dt = 50 A/µs
2
