KSA542

( DataSheet : www.DataSheet4U.com ) KSA542 KSA542 LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -30V Low Collector-Emitter Saturation Voltage : VCE(sat)= -0.15V(TYP.) Complement to KSC184 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 -50 250 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA. IB=0 IE = -10µA. IC=0 VCB= -25V, IE=0 VEB= -3V, IC=0 VCE= -6V, IC= -1mA IC= -20mA, IB= -2mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA VCB= -6V, IE = 0, f=1MHz 40 -0.15 -0.65 100 2.5 Min. -30 -25 -5 -100 -100 400 -0.3 -1.0 V V MHz pF Typ. Max. Units V V V nA nA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000 www.DataSheet4U.com KSA542 Typical...