KM688100

( DataSheet : www.DataSheet4U.com ) Preliminary KM688100 Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date June 22, 1999 Remark Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 June 1999 www.DataSheet4U.com Preliminary KM688100 Family 1Mx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES Process Technology: TFT Organization: 1M x8 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2.0V(Min) Three state output and TTL Compatible Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The KM688100 families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family KM688100L-L KM688100LI-L Operating Temperature Commercial(0~70°C) Industrial(-40~85°C) Vcc Range Speed Standby (ISB1, Max) 50µA 80µA Operating (ICC2, Max) 70mA PKG Type 4.5~5.5V 55 1)/70ns 44-TSOP2-400F/R 1. The parameter is measured with 50pF tes...