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EDD2516AKTA-5-E

Elpida Memory

256M bits DDR SDRAM (16M words x16 bits DDR400)

( DataSheet : www.DataSheet4U.com ) DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E (16M words × 16 bits, DDR400) Descr...


Elpida Memory

EDD2516AKTA-5-E

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Description
( DataSheet : www.DataSheet4U.com ) DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-5-E (16M words × 16 bits, DDR400) Description The EDD2516AKTA-5 is a 256M bits DDR SDRAM organized as 4,194,304 words × 16 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. It is packaged in 66-pin plastic TSOP (II). Pin Configurations /xxx indicates active low signal. 66-pin Plastic TSOP(II) VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM /WE /CAS /RAS /CS NC BA0 BA1 A10(AP) A0 A1 A2 A3 VDD VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC VREF VSS UDM /CK CK CKE NC A12 A11 A9 A8 A7 A6 A5 A4 VSS Features Power supply: VDD, VDDQ = 2.6V ± 0.1V Data rate: 400Mbps (max.) Double Data Rate architecture; two data transfers per clock cycle Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver Data inputs, outputs, and DM are synchronized with DQS 4 internal banks for concurrent operation DQS is edge aligned with data for READs; center aligned with data for WRITEs Differential clock inputs (CK and /CK) DLL aligns DQ and DQS transitions with ...




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