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EDD2516AKTA-E

Elpida Memory

256M bits DDR SDRAM (16M words x16 bits DDR400)

( DataSheet : www.DataSheet4U.com ) DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-E (16M words × 16 bits) Description The...


Elpida Memory

EDD2516AKTA-E

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Description
( DataSheet : www.DataSheet4U.com ) DATA SHEET 256M bits DDR SDRAM EDD2516AKTA-E (16M words × 16 bits) Description The EDD2516AKTA is a 256M bits Double Data Rate (DDR) SDRAM organized as 4,194,304 words × 16 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 2 bits prefetchpipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. It is packaged in 66-pin plastic TSOP (II). Pin Configurations /xxx indicates active low signal. 66-pin Plastic TSOP(II) VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM /WE /CAS /RAS /CS NC BA0 BA1 A10(AP) A0 A1 A2 A3 VDD Features Power supply : VDDQ = 2.5V ± 0.2V : VDD = 2.5V ± 0.2V Data rate: 333Mbps/266Mbps (max.) Double Data Rate architecture; two data transfers per clock cycle Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver Data inputs, outputs, and DM are synchronized with DQS 4 internal banks for concurrent operation DQS is edge aligned with data for READs; center aligned with data for WRITEs Differential clock inputs (CK and /CK) DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask referenced to b...




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