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Embedded Memory. JS28F128P30T85 Datasheet

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Embedded Memory. JS28F128P30T85 Datasheet






JS28F128P30T85 Memory. Datasheet pdf. Equivalent




JS28F128P30T85 Memory. Datasheet pdf. Equivalent





Part

JS28F128P30T85

Description

Intel StrataFlash Embedded Memory



Feature


( DataSheet : www.DataSheet4U.com ) Int el StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product F eatures ■ High performance ■ Securi ty — 85/88 ns initial access — One- Time Programmable Registers: • 64 uni que factory device identifier bits — 40 MHz with zero wait states, 20 ns clo ck-to• 64 user-programmable OTP bits data output synchronous-burst rea.
Manufacture

Intel Corporation

Datasheet
Download JS28F128P30T85 Datasheet


Intel Corporation JS28F128P30T85

JS28F128P30T85; d mode • Additional 2048 user-programm able OTP bits — 25 ns asynchronous-pa ge read mode — Selectable OTP Space i n Main Array: — 4-, 8-, 16-, and cont inuous-word burst mode • 4x32KB param eter blocks + 3x128KB main — Buffered Enhanced Factory Programming blocks (t op or bottom configuration) (BEFP) at 5 µs/byte (Typ) — Absolute write prot ection: VPP = VSS — 1.8 V buffere.


Intel Corporation JS28F128P30T85

d programming at 7 µs/byte (Typ) — Po wer-transition erase/program lockout Architecture — Individual zero-late ncy block locking — Multi-Level Cell Technology: Highest Density — Individ ual block lock-down at Lowest Cost ■ Software — Asymmetrically-blocked arc hitecture — 20 µs (Typ) program susp end — Four 32-KByte parameter blocks: top or — 20 µs (Typ) erase suspend bo.


Intel Corporation JS28F128P30T85

ttom configuration — Intel® Flash Dat a Integrator optimized — 128-KByte ma in blocks — Basic Command Set and Ext ended Command ■ Voltage and Power Set compatible — VCC (core) voltage: 1.7 V – 2.0 V — Common Flash Interface capable — VCCQ (I/O) voltage: 1.7 V – 3.6 V ■ Density and Packaging — Standby current: 55 µA (Typ) for 256- Mbit — 64/128/256-Mbit densities in 56-Lea.

Part

JS28F128P30T85

Description

Intel StrataFlash Embedded Memory



Feature


( DataSheet : www.DataSheet4U.com ) Int el StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product F eatures ■ High performance ■ Securi ty — 85/88 ns initial access — One- Time Programmable Registers: • 64 uni que factory device identifier bits — 40 MHz with zero wait states, 20 ns clo ck-to• 64 user-programmable OTP bits data output synchronous-burst rea.
Manufacture

Intel Corporation

Datasheet
Download JS28F128P30T85 Datasheet




 JS28F128P30T85
( DataSheet : www.DataSheet4U.com )
Intel StrataFlash® Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
High performance
Security
— 85/88 ns initial access
— One-Time Programmable Registers:
— 40 MHz with zero wait states, 20 ns clock-to-
data output synchronous-burst read mode
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
— 25 ns asynchronous-page read mode
• Additional 2048 user-programmable OTP bits
— 4-, 8-, 16-, and continuous-word burst mode
— Selectable OTP Space in Main Array:
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
• 4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— 1.8 V buffered programming at 7 µs/byte (Typ)
— Absolute write protection: VPP = VSS
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
— Asymmetrically-blocked architecture
Software
— Four 32-KByte parameter blocks: top or
— 20 µs (Typ) program suspend
bottom configuration
— 20 µs (Typ) erase suspend
— 128-KByte main blocks
— Intel® Flash Data Integrator optimized
Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V
— VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
Density and Packaging
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
— 64/128/256-Mbit densities in 56-Lead TSOP
package
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— 64/128/256/512-Mbit densities in 64-Ball
Intel® Easy BGA package
• 1-Gbit in SCSP is –30 °C to +85 °C
— 64/128/256/512-Mbit and 1-Gbit densities in
— Minimum 100,000 erase cycles per block
Intel® QUAD+ SCSP
— ETOX™ VIII process technology (130 nm)
— 16-bit wide data bus
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.
www.DataSheet4U.com
Order Number: 306666, Revision: 001
April 2005




 JS28F128P30T85
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY
ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES
RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER
INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
This document contains information on products in the design phase of development. The information here is subject to change without notice. Do not
finalize a design with this information.
StrataFlash® Embedded Memory (P30) Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing
your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-
548-4725 or by visiting Intel's website at http://www.intel.com.
Copyright © 2005, Intel Corporation
* Other names and brands may be claimed as the property of others.
April 2005
2
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet




 JS28F128P30T85
1-Gbit P30 Family
Contents
1.0 Introduction ...............................................................................................................................7
1.1 Nomenclature .......................................................................................................................7
1.2 Acronyms ..............................................................................................................................7
1.3 Conventions..........................................................................................................................8
2.0 Functional Overview ..............................................................................................................9
3.0 Package Information ............................................................................................................10
3.1 56-Lead TSOP Package .....................................................................................................10
3.2 64-Ball Easy BGA Package ................................................................................................12
3.3 QUAD+ SCSP Packages....................................................................................................13
4.0 Ballout and Signal Descriptions......................................................................................17
4.1 Signal Ballout......................................................................................................................17
4.2 Signal Descriptions .............................................................................................................20
4.3 SCSP Configurations ..........................................................................................................22
4.4 Memory Maps .....................................................................................................................24
5.0 Maximum Ratings and Operating Conditions ...........................................................29
5.1 Absolute Maximum Ratings ................................................................................................29
5.2 Operating Conditions ..........................................................................................................30
6.0 Electrical Specifications .....................................................................................................31
6.1 DC Current Characteristics .................................................................................................31
6.2 DC Voltage Characteristics.................................................................................................32
7.0 AC Characteristics ................................................................................................................33
7.1 AC Test Conditions.............................................................................................................33
7.2 Capacitance ........................................................................................................................34
7.3 AC Read Specifications ......................................................................................................35
7.4 AC Write Specifications ......................................................................................................41
7.5 Program and Erase Characteristics ....................................................................................45
8.0 Power and Reset Specifications .....................................................................................46
8.1 Power Up and Down ...........................................................................................................46
8.2 Reset Specifications ...........................................................................................................46
8.3 Power Supply Decoupling...................................................................................................47
9.0 Device Operations.................................................................................................................48
9.1 Bus Operations ...................................................................................................................48
9.1.1 Reads ....................................................................................................................48
9.1.2 Writes.....................................................................................................................49
9.1.3 Output Disable .......................................................................................................49
9.1.4 Standby..................................................................................................................49
9.1.5 Reset .....................................................................................................................49
9.2 Device Commands .............................................................................................................50
9.3 Command Definitions .........................................................................................................51
Datasheet
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
3






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