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K1611 Dataheets PDF



Part Number K1611
Manufacturers ETC
Logo ETC
Description N-Channel MOSFET Transistor
Datasheet K1611 DatasheetK1611 Datasheet (PDF)

Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain cur.

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Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±3 ±6 20 50 2 150 −55 to +150 Unit V V A A mJ 4.0 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 1 2 Avalanche energy capacity www.DataSheet4U.com Allowable power TC = 25°C dissipation Channel temperature Storage temperature * Ta = 25°C W °C °C 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 Single pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.5mH, ID = 3A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A VDS = 20V, VGS = 0, f = 1MHz 1.5 800 20 1 3.2 2.4 730 90 40 VGS = 10V, ID = 2A VDD = 200V, RL = 100Ω 40 35 105 5 4 min typ max 0.1 ±1 Unit mA µA V mJ V Ω S pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) * Avalanche energy capacity test circuit L ID Gate VDS Drain Source C VDD PVS RGS 1 Power F-MOS FETs ID  VDS 6 3.2 2SK1611 | Yfs |  ID Forward transfer admittance |Yfs| (S) RDS(on)  ID VDS=25V TC=25˚C TC=25˚C 5 VGS=15V 10V 7V Drain to source ON-resistance RDS(on) (Ω) 10 TC=25˚C 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 8 Drain current ID (A) 6V 4 6 3 4 2 5V 1 50W VGS=10V 15V 2 4V 0 0 10 20 30 40 50 60 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 Drain to source voltage VDS (V) Drain current ID (A) Drain current ID (A) ID  VGS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 6 10000 Ciss, Coss, Crss  VDS 160 TC=25˚C 140 VDS=25V TC=25V ton, tf, td(off)  ID VDD=200V VGS=10V TC=25˚C www.DataSheet4U.com 5 3000 Switching time ton,tf,td(off) (ns) Drain current ID (A) 120 td(off) 100 80 60 ton 40 tf 20 0 4 1000 Ciss 300 3 2 100 Coss 30 Crss 10 0 40 80 120 160 200 240 1 0 0 2 4 6 8 10 0 1 2 3 4 5 6 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Drain current ID (A) PD  Ta 60 Area of safe operation (ASO) 100 30 10 3 1 0.3 0.1 0.03 IDP ID DC t=1ms 30 EAS  Tj Avalanche energy capacity EAS (mJ) ID=3A VDD=50V 25 Allowable power dissipation PD (W) 50 (1) TC=Ta (2) Without heat sink (PD=2W) Non repetitive pulse TC=25˚C 40 (1) 30 Drain current ID (A) 20 15 20 10ms 10 10 (2) 0 0 20 40 60 80 100 120 140 160 0.01 1 3 10 30 100 300 1000 5 0 25 50 75 100 125 150 175 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Junction temperature Tj (˚C) 2 .


DI101 K1611 12S15.400


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