Document
Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic
unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
s Applications
16.7±0.3
7.5±0.2
q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification
φ3.1±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±3 ±6 20 50 2 150 −55 to +150 Unit V V A A mJ
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5 +0.2 –0.1 0.8±0.1
2.54±0.25 5.08±0.5 1 2
Avalanche energy capacity www.DataSheet4U.com Allowable power TC = 25°C dissipation Channel temperature Storage temperature
*
Ta = 25°C
W °C °C
1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a)
3
Single pulse
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.5mH, ID = 3A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A VDS = 20V, VGS = 0, f = 1MHz 1.5 800 20 1 3.2 2.4 730 90 40 VGS = 10V, ID = 2A VDD = 200V, RL = 100Ω 40 35 105 5 4 min typ max 0.1 ±1 Unit mA µA V mJ V Ω S pF pF pF ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time)
*
Avalanche energy capacity test circuit
L ID Gate VDS Drain Source C VDD
PVS
RGS
1
Power F-MOS FETs
ID VDS
6 3.2
2SK1611
| Yfs | ID
Forward transfer admittance |Yfs| (S)
RDS(on) ID
VDS=25V TC=25˚C
TC=25˚C 5 VGS=15V 10V 7V
Drain to source ON-resistance RDS(on) (Ω)
10 TC=25˚C
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0
8
Drain current ID (A)
6V 4
6
3
4
2 5V 1 50W
VGS=10V 15V
2
4V 0 0 10 20 30 40 50 60 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
Drain to source voltage VDS (V)
Drain current ID (A)
Drain current ID (A)
ID VGS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
6 10000
Ciss, Coss, Crss VDS
160 TC=25˚C 140 VDS=25V TC=25V
ton, tf, td(off) ID
VDD=200V VGS=10V TC=25˚C
www.DataSheet4U.com
5
3000
Switching time ton,tf,td(off) (ns)
Drain current ID (A)
120 td(off) 100 80 60 ton 40 tf 20 0
4
1000 Ciss 300
3
2
100 Coss 30 Crss 10 0 40 80 120 160 200 240
1
0 0 2 4 6 8 10
0
1
2
3
4
5
6
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
Drain current ID (A)
PD Ta
60
Area of safe operation (ASO)
100 30 10 3 1 0.3 0.1 0.03 IDP ID DC t=1ms 30
EAS Tj
Avalanche energy capacity EAS (mJ)
ID=3A VDD=50V 25
Allowable power dissipation PD (W)
50
(1) TC=Ta (2) Without heat sink (PD=2W)
Non repetitive pulse TC=25˚C
40 (1) 30
Drain current ID (A)
20
15
20
10ms
10
10 (2) 0 0 20 40 60 80 100 120 140 160 0.01 1 3 10 30 100 300 1000
5
0 25
50
75
100
125
150
175
Ambient temperature Ta (˚C)
Drain to source voltage VDS (V)
Junction temperature Tj (˚C)
2
.