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KSC5803. C5803 Datasheet

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KSC5803. C5803 Datasheet
















C5803 KSC5803. Datasheet pdf. Equivalent













Part

C5803

Description

KSC5803



Feature


www.DataSheet4U.com KSC5803 KSC5803 Hi gh Voltage Color Display Horizontal Def lection Output (No Damper Diode) • • • High Breakdown Voltage : BVCB O=1500V High Speed Switching : tF=0.1µ s (Typ.) Wide S.O.A For C-Monitor(85KHz ) TO-3PF 2.Collector 3.Emitter 1 1.Ba se NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC= 25°C unless otherwise noted.
Manufacture

KEC

Datasheet
Download C5803 Datasheet


KEC C5803

C5803; Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Colle ctor-Emitter Voltage Emitter-Base Volta ge Collector Current (DC) Collector Cur rent (Pulse) Collector Dissipation (TC= 25°C) Junction Temperature Storage Tem perature Value 1500 800 6 12 24 70 150 - 55 ~ 150 Units V V V A A W °C °C E lectrical Characteristics TC=25°C unle ss otherwise noted Sym.


KEC C5803

bol ICES ICBO IEBO hFE1 hFE2 VCE(sat) VB E(sat) tSTG tF Parameter Collector Cut- off Current Collector Cut-off Current E mitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Ba se-Emitter Saturation Voltage Storage T ime Fall Time Test Condition VCE = 1400 V, VBE=0 VCE= 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 8 A IC = 8A, IB = 2A.


KEC C5803

IC = 8A, IB = 2A VCC = 200V, IC = 7A IB 1 = 1.4A, IB2= - 2.8A RL = 28.6Ω 15 5 .5 Min. Typ. Max. 1 10 1 40 8.5 3 1.5 4 0.3 V V µs µs Units mA µA mA ©200 0 Fairchild Semiconductor International Rev. A, February 2000 www.DataSheet4 U.com KSC5803 Typical Characteristics 12 100 VCE=5V IC[A], COLLECTOR CUR RENT 10 8 hFE, DC CURRENT GAIN IB=2 .0A IB=1.8A IB=1.6A IB =.





Part

C5803

Description

KSC5803



Feature


www.DataSheet4U.com KSC5803 KSC5803 Hi gh Voltage Color Display Horizontal Def lection Output (No Damper Diode) • • • High Breakdown Voltage : BVCB O=1500V High Speed Switching : tF=0.1µ s (Typ.) Wide S.O.A For C-Monitor(85KHz ) TO-3PF 2.Collector 3.Emitter 1 1.Ba se NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC= 25°C unless otherwise noted.
Manufacture

KEC

Datasheet
Download C5803 Datasheet




 C5803
www.DataSheet4U.com
KSC5803
High Voltage Color Display Horizontal
Deflection Output
(No Damper Diode)
• High Breakdown Voltage : BVCBO=1500V
• High Speed Switching : tF=0.1µs (Typ.)
• Wide S.O.A
• For C-Monitor(85KHz)
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tSTG
tF
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
VCE = 1400V, VBE=0
VCE= 800V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
IC = 8A, IB = 2A
IC = 8A, IB = 2A
VCC = 200V, IC = 7A
IB1 = 1.4A, IB2= - 2.8A
RL = 28.6
Value
1500
800
6
12
24
70
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Min.
15
5.5
Typ.
Max.
1
10
1
40
8.5
3
1.5
4
0.3
Units
mA
µA
mA
V
V
µs
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000




 C5803
www.DataSheet4U.com
Typical Characteristics
12
IB=2.0A
10
IB=1.8A
IB=1.6A
IB=1.4A
IB=1.2A
8 IB=1.0A
IB=800mA
6 IB=600mA
IB=400mA
4
IB=200mA
2
0
0 1 2 3 4 5 6 7 8 9 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
2
IC=3IB
1
0.9
0.8 -25
0.7
25
0.6
75
0.5 125
0.4
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 3. Base-Emitter Saturation Voltage
104
IC=5IB
103
102
125
75
25
-25
101
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 5. Collector-Emitter Saturation Voltage 2
©2000 Fairchild Semiconductor International
100
125
75
25
-25
10
VCE=5V
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
104
IC=3IB
103
102
125
75
25
-25
101
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage 1
12
VCE=5V
10
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VBE[V], BASE EMITTER VOLTAGE
Figure 6. Base-Emitter On Voltage
Rev. A, February 2000




 C5803
www.DataSheet4U.com
Typical Characteristics (Continued)
10
RESISTIVE
Vcc=200V
Ic=7A
Ib1=1.4A
tstg
1
tf
0.1
0.1
1
-IB2[A], BASE CURRENT
Figure 7. Switching Time
10
100
10
Ib2=-1AConst
(at Ic>5A)
1
Ic=5Ib1=5Ib2
L=500µH
SINGLE PULSE
0.1
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
100
10
DC 100ms
10µs
100µs
10ms 1ms
1
0.1
SINGLE PULSE
Tc=25
0.01
1
10
100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 8. Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
TC[], CASE TEMPERATURE
Figure 10. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000




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