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PNP Transistor. 2SA1648 Datasheet

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PNP Transistor. 2SA1648 Datasheet
















2SA1648 Transistor. Datasheet pdf. Equivalent













Part

2SA1648

Description

PNP Transistor



Feature


( DataSheet : www.DataSheet4U.com ) DATA SHEET SILICON POWER TRANSISTOR 2SA1648 ,1648-Z PNP SILICON EPITAXIAL TRANSISTO R FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed f or highspeed switching and features a v ery low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC conv erters, motor driv.
Manufacture

NEC

Datasheet
Download 2SA1648 Datasheet


NEC 2SA1648

2SA1648; ers, solenoid drivers, and other low-vol tage power supply devices, as well as f or high-current switching. PACKAGE DRA WINGS (Unit: mm) +0.2 −0.1 6.5 ±0. 2 5.0 ±0.2 4 1.5 2.3 ±0.2 0.5 ±0.1 7.0 MIN. 5.5 ±0.2 13.7 MIN. 1.6 ±0 .2 FEATURES • Available for high-cur rent control in small dimension • Z t ype is a lead processed product and is deal for mounting a hybrid IC..


NEC 2SA1648

• Mold package that does not require an insulating board or insulation bushi ng • Low collector saturation voltage : VCE(sat)1 = −0.3 V MAX. (IC = −3. 0 A) • Fast switching speed: tf = 0.3 µs MAX. (IC = −3.0 A) • High DC c urrent gain and excellent linearity 12 3 1.1 ±0.2 2.3 2.3 0.5 +0.2 −0.1 0.5 +0.2 −0.1 0.75 TO-251 (MP-3) 1.5-+00..12 ABSOLUTE MAXIMUM RATINGS.


NEC 2SA1648

(TA = 25°C) Parameter Collector to ba se voltage Symbol VCBO Ratings −100 Unit V 6.5±0.2 5.0±0.2 4 2.3±0.2 0.5±0.1 1.0 MIN. 0.7 1.8TYP. 10.0 M AX. 5.5±0.2 0.8 4.3 MAX. Collector to emitter voltage Emitter to base volt age Collector current (DC) Collector cu rrent (pulse) VCEO VEBO IC(DC) I Note 1 C(pulse) −60 −7.0 −5.0 −10 V V A A 123 2.0 MIN. 1.1±0.2 2.





Part

2SA1648

Description

PNP Transistor



Feature


( DataSheet : www.DataSheet4U.com ) DATA SHEET SILICON POWER TRANSISTOR 2SA1648 ,1648-Z PNP SILICON EPITAXIAL TRANSISTO R FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed f or highspeed switching and features a v ery low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC conv erters, motor driv.
Manufacture

NEC

Datasheet
Download 2SA1648 Datasheet




 2SA1648
( DataSheet : www.DataSheet4U.com )
DATA SHEET
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
PACKAGE DRAWINGS (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat)1 = 0.3 V MAX. (IC = 3.0 A)
• Fast switching speed:
tf = 0.3 µs MAX. (IC = 3.0 A)
• High DC current gain and excellent linearity
123
1.1 ±0.2
2.3 2.3
0.5
+0.2
0.1
0.5
+0.2
0.1
TO-251 (MP-3)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Symbol
VCBO
Ratings
100
Unit
V
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
VCEO
VEBO
IC(DC)
I Note 1
C(pulse)
60
7.0
5.0
10
V
V
A
A
123
1.1±0.2
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
Base current (DC)
Total power dissipation (Tc = 25°C)
Total power dissipation (Ta = 25°C)
Junction temperature
Storage temperature
IB(DC)
PT
PT
Tj
Tstg
2.5
18
1.0Note 2, 2.0Note 3
150
55 to +150
A
W
W
°C
°C
Notes 1. PW 300 µs, Duty Cycle 10%
2. Printing board mounted
3. 7.5 mm2 × 0.7 mm ceramic board mounted
TO-252 (MP3Z)
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector (Fin)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16121EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
www.DataSheet4U.com
The mark shows major revised points.
c
2002




 2SA1648
2SA1648,1648-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
VCEO(SUS)
IC = 3.0 A, IB = 0.3 A, L = 1 mH
Collector to emitter voltage
VCEX(SUS)
IC = 3.0 A, IB2 = IB1 = 0.3 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
ICBO VCE = 60 V, IE = 0 A
Collector cutoff current
ICER VCE = 60 V, RBE = 50 , TA = 125°C
Collector cutoff current
ICEX1
VCE = 60 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = 60 V, VBE(OFF) = 1.5 V,
TA = 125°C
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
IEBO
h Note
FE1
h Note
FE2
h Note
FE3
V Note
CE(sat)1
V Note
CE(sat)2
V Note
BE(sat)1
V Note
BE(sat)2
VEB = 5.0 V, IC = 0 A
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 3.0 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
Collector capacitance
Cob VCB = 10 V, IE = 0 A, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IC = 0.5 A
Turn-on time
Storage time
Fall time
ton IC = 3.0 A, RL = 17 ,
tstg IB1 = IB2 = 0.15 A, VCC ≅ −50 V
Refer to SWITCHING TIME TEST
tf CIRCUIT.
Note Pulse test PW 350 µs, Duty Cycle 2%/Pulsed
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
MIN.
60
60
100
100
60
TYP.
MAX.
10
1.0
10
1.0
10
200 400
0.3
0.5
1.2
1.5
80
90
0.3
1.5
0.3
Unit
V
V
µA
mA
µA
mA
µA
V
V
V
V
pF
MHz
µs
µs
µs
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
2 Data Sheet D16121EJ3V0DS




 2SA1648
TYPICAL CHARACTERISTICS (TA = 25°C)
2SA1648,1648-Z
Case Temperature TC (°C)
TC = 25°C
Single pulse
Collector to Emitter Voltage VCE (V)
Case Temperature TC (°C)
TC = 25°C
Single pulse
Rth(jA) = 125 °C/W
Rth(jC) = 6.94 °C/W
Pulse Width PW (s)
Pulse test
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Data Sheet D16121EJ3V0DS
3




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