EPITAXIAL TRANSISTOR. 2SA1646 Datasheet

2SA1646 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SA1646
Description PNP SILICON EPITAXIAL TRANSISTOR
Feature ( DataSheet : www.DataSheet4U.com ) DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILIC.
Manufacture NEC
Datasheet
Download 2SA1646 Datasheet



2SA1646
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1646, 2SA1646-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1646 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) = 0.3 V MAX. @IC = 6 A
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Ratings Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage VCEO
100
V
Emitter to base voltage
VEBO
7.0 V
Collector current
ID(DC)
10 A
Collector current
IC(pulse) PW 300 µs,
duty cycle 10%
20
A
Base current
IB(DC)
6.0 A
Total power dissipation
PT Tc = 25°C
40 W
Total power dissipation
PT Ta = 25°C
1.5 W
Junction temperature
Tj
150 °C
Storage temperature
Tstg
55 to +150 °C
?
?
?
?
Electrode Connection
?
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16120EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
www.DataSheet4U.com
©
2002



2SA1646
2SA1646, 2SA1646-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Emitter cutoff current
IEBO VEB = 5 V, IC = 0
DC current gain
hFE1* VCE = 2 V, IC = 0.5 A
DC current gain
hFE2* VCE = 2 V, IC = 2 A
DC current gain
hFE3* VCE = 2 V, IC = 6 A
Collector saturation voltage VCE(sat)1* IC = 6 A, IB = 0.3 A
Collector saturation voltage VCE(sat)2* IC = 8 A, IB = 0.4 A
Base saturation voltage
VBE(sat)1* IC = 6 A, IB = 0.3 A
Base saturation voltage
VBE(sat)2* IC = 8 A, IB = 0.4 A
Gain bandwidth product
fT VCE = 10 V, IC = 0.5 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
Storage time
Fall time
ton IC = 6 A, IB1 = IB2 = 0.3 A,
tstg RL = 8.3 , VCC = 50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, Duty Cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME TEST CIRCUIT
MIN.
100
100
60
TYP.
150
250
0.3
1.5
0.4
MAX.
10
10
400
0.3
0.5
1.2
1.5
Unit
µA
µA
V
V
V
V
MHz
pF
µs
µs
µs
Base current
waveform
Collector current
waveform
2 Data Sheet D16120EJ1V0DS





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