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DATA SHEET
SILICON POWER TRANSISTOR
2SA1645, 2SA1645-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1645 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching.
FEATURES • Fast switching speed • Low collector-to-emitter saturation voltage:
VCE(sat) = −0.3 V MAX. @IC = −4 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current
Base current Total power dissipation Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO
Conditions
VEBO
ID(DC)
IC(pulse)
PW ≤ 300 µs, Duty Cycle ≤ 10%
IB(DC)
PT Tc = 25 °C
PT Ta = 25 °C
Tj
Tstg
Ratings −150 −100
Unit V V
−7.0 −7.0 −14
V A A
−3.5 35 1.5 150 −55 to +150
A W W °C °C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15587EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan
www.DataSheet4U.com
©
2002
2SA1645, 2SA1645-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = −100 V, IE = 0
Emitter cutoff current
IEBO VEB = −5 V, IC = 0
DC current gain
hFE1* VCE = −2 V, IC = −0.5 A
DC current gain
hFE2* VCE = −2 V, IC = −1.5 A
DC current gain
hFE3* VCE = −2 V, IC = −4 A
Collector saturation voltage VCE(sat)1* IC = −4 A, IB = −0.2 A
Collector saturation voltage VCE(sat)2* IC = −6 A, IB = −0.3 A
Base saturation voltage
VBE(sat)1* IC = −4 A, IB = −0.2 A
Base saturation voltage
VBE(sat)2* IC = −6 A, IB = −0.3 A
Gain bandwidth product
fT VCE = −10 V, IC = −1.5 A
Collector capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
Turn-on time Storage time Fall time
ton IC = −4 A, IB1 = −IB2 = −0.2 A,
tstg RL = 12.5 Ω, VCC = −50 V Refer to the test circuit.
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking hFE2
M 100 to 200
L 150 to 300
K 200 to 400
SWITCHING TIME TEST CIRCUIT
MIN.
100 100 60
TYP.
150 150 0.3 1.5 0.4
MAX. −10 −10
400
−0.3 −0.5 −1.2 −1.5
Unit µA µA − − − V V V V MHz pF µs µs µs
Base current waveform
Collector current waveform
2 Data Sheet D15587EJ2V0DS
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SA1645, 2SA1645-Z
IC Derating dT (%)
Total Power Dissipation PT (W)
Collector Current IC (mA)
Case Temperature TC (°C)
Case Temperature TC (°C)
Collector Current IC (A)
Single pulse Collector to Emitter Voltage VCE (V)
Pulse test
Collector to Emitter Voltage VCE (V) Pulse test
Collector Saturation Voltage VCE(sat) (V)
Collector Current IC (A)
Collector Current IC (mA)
Data Sheet D15587EJ2V0DS
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4 Data Sheet D15587EJ2V0DS
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Data Sheet D15587EJ2V0DS
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2SA1645, 2SA1645-Z
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