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Power Transistor. 2N5070 Datasheet

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Power Transistor. 2N5070 Datasheet
















2N5070 Transistor. Datasheet pdf. Equivalent













Part

2N5070

Description

NPN Silicon RF Power Transistor



Feature


( DataSheet : www.DataSheet4U.com ) 2N5 070 NPN SILICON RF POWER TRANSISTOR D ESCRIPTION: The ASI 2N5070 is Designed for High Power Linear Amplifier Applica tion in the 2.0 to 75 MHz Range. FEATUR ES INCLUDE: • Emitter Ballasted • C ommon Emitter Package MAXIMUM RATINGS 3.3 A IC 10 A (PEAK) VCE PDISS TSTG JC 30 V 70 W @ TC = 25 OC -65 OC to + 200 OC 2.5 OC/W PACKAG.
Manufacture

Advanced Semiconductor

Datasheet
Download 2N5070 Datasheet


Advanced Semiconductor 2N5070

2N5070; E STYLE TO- 60 1 = EMITTER 2 = BASE 3 = COLLECTOR CASE = EMITTER CHARACTERI STICS TC = 25 OC SYMBOL TEST CONDITIO NS BVCEO IC = 200 mA BVCER IC = 200 mA RBE = 5.0 Ω ICEO VCE = 30 V IC EV VCE = 60 V VBE = -1.5 V VCE = 60 V V BE = -1.5 V TC = 150 OC ICBO VCB = 6 0 V IEBO VEB = 4.0 V hFE VCE = 5.0 V IC = 1.0 A IC = 3.0 A MINIMUM TYPICA L MAXIMUM 30 40 5.0 .


Advanced Semiconductor 2N5070

10 10 10 10 10 100 10 100 UNITS V V mA mA mA mA --- Cob VCB = 30 V ft VCE = 1 5 V IC = 1.0 A f = 1.0 MHz f = 50 MHz 100 85 pF MHz Pin η IMD VCE = 28 V Pout = 25 W(PEP) f1 = 30 MHz f2 = 30.0 01 MHz Zg = 50 Ω 40 1.25 W % -30 d B A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NOR TH HOLLYWOOD, CA 91605 • (818) 982-12 00 • FAX (818) 765-3004 S.


Advanced Semiconductor 2N5070

pecifications are subject to change with out notice. www.DataSheet4U.com REV. A 1/1 .





Part

2N5070

Description

NPN Silicon RF Power Transistor



Feature


( DataSheet : www.DataSheet4U.com ) 2N5 070 NPN SILICON RF POWER TRANSISTOR D ESCRIPTION: The ASI 2N5070 is Designed for High Power Linear Amplifier Applica tion in the 2.0 to 75 MHz Range. FEATUR ES INCLUDE: • Emitter Ballasted • C ommon Emitter Package MAXIMUM RATINGS 3.3 A IC 10 A (PEAK) VCE PDISS TSTG JC 30 V 70 W @ TC = 25 OC -65 OC to + 200 OC 2.5 OC/W PACKAG.
Manufacture

Advanced Semiconductor

Datasheet
Download 2N5070 Datasheet




 2N5070
( DataSheet : www.DataSheet4U.com )
2N5070
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5070 is Designed for High
Power Linear Amplifier Application in the
2.0 to 75 MHz Range.
FEATURES INCLUDE:
Emitter Ballasted
Common Emitter Package
MAXIMUM RATINGS
3.3 A
IC 10 A (PEAK)
VCE
PDISS
TSTG
θJC
30 V
70 W @ TC = 25 OC
-65 OC to +200 OC
2.5 OC/W
PACKAGE STYLE TO- 60
1 = EMITTER
2 = BASE
3 = COLLECTOR CASE = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCER
IC = 200 mA RBE = 5.0
ICEO
VCE = 30 V
ICEV VCE = 60 V VBE = -1.5 V
VCE = 60 V VBE = -1.5 V
TC = 150 OC
ICBO
VCB = 60 V
IEBO
VEB = 4.0 V
hFE
VCE = 5.0 V IC = 1.0 A
IC = 3.0 A
MINIMUM TYPICAL MAXIMUM
30
40
5.0
10
10
10
10
10 100
10 100
UNITS
V
V
mA
mA
mA
mA
---
Cob VCB = 30 V
ft VCE = 15 V IC = 1.0 A
f = 1.0 MHz
f = 50 MHz
100
85 pF
MHz
Pin
η
IMD
VCE = 28 V Pout = 25 W(PEP)
f1 = 30 MHz f2 = 30.001 MHz
Zg = 50
40
1.25 W
%
-30 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
www.DataSheet4U.com
REV. A
1/1












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