Power Transistor. 2N5070 Datasheet

2N5070 Transistor. Datasheet pdf. Equivalent

Part 2N5070
Description NPN Silicon RF Power Transistor
Feature ( DataSheet : www.DataSheet4U.com ) 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2.
Manufacture Advanced Semiconductor
Datasheet
Download 2N5070 Datasheet



2N5070
( DataSheet : www.DataSheet4U.com )
2N5070
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5070 is Designed for High
Power Linear Amplifier Application in the
2.0 to 75 MHz Range.
FEATURES INCLUDE:
Emitter Ballasted
Common Emitter Package
MAXIMUM RATINGS
3.3 A
IC 10 A (PEAK)
VCE
PDISS
TSTG
θJC
30 V
70 W @ TC = 25 OC
-65 OC to +200 OC
2.5 OC/W
PACKAGE STYLE TO- 60
1 = EMITTER
2 = BASE
3 = COLLECTOR CASE = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCER
IC = 200 mA RBE = 5.0
ICEO
VCE = 30 V
ICEV VCE = 60 V VBE = -1.5 V
VCE = 60 V VBE = -1.5 V
TC = 150 OC
ICBO
VCB = 60 V
IEBO
VEB = 4.0 V
hFE
VCE = 5.0 V IC = 1.0 A
IC = 3.0 A
MINIMUM TYPICAL MAXIMUM
30
40
5.0
10
10
10
10
10 100
10 100
UNITS
V
V
mA
mA
mA
mA
---
Cob VCB = 30 V
ft VCE = 15 V IC = 1.0 A
f = 1.0 MHz
f = 50 MHz
100
85 pF
MHz
Pin
η
IMD
VCE = 28 V Pout = 25 W(PEP)
f1 = 30 MHz f2 = 30.001 MHz
Zg = 50
40
1.25 W
%
-30 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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REV. A
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