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KA5H02659. 5H02659 Datasheet

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KA5H02659. 5H02659 Datasheet






5H02659 KA5H02659. Datasheet pdf. Equivalent




5H02659 KA5H02659. Datasheet pdf. Equivalent





Part

5H02659

Description

KA5H02659



Feature


www.fairchildsemi.com KA5x02xx-SERIES KA5H0265RC, KA5M0265R, KA5L0265R, KA5H0 2659RN/KA5M02659RN, KA5H0280R, KA5M0280 R Fairchild Power Switch(FPS) Features www.DataSheet4U.com • Precision Fixed Operating Frequency (100/67/50kHz) De scription The Fairchild Power Switch(FP S) product family is specially designed for an off-line SMPS with minimal exte rnal components. The.
Manufacture

Fairchild Semiconductor

Datasheet
Download 5H02659 Datasheet


Fairchild Semiconductor 5H02659

5H02659; Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller f eatures integrated fixed oscillator, un der voltage lock out, leading edge blan king, optimized gate turn-on/ turn-off driver, thermal shut down protection, o ver voltage protection, and temperature compensated precision current sources for loop compensat.


Fairchild Semiconductor 5H02659

ion and fault protection circuitrycompar ed to discrete MOSFET and controller or RCC switching converter solution. The Fairchild Power Switch(FPS) can reduce total component count, design size, wei ght and at the same time increase effic iency, productivity, and system reliabi lity. It has a basic platform well suit ed for cost-effective design in either a flyback converte.


Fairchild Semiconductor 5H02659

r or a forward converter. TO-220F-4L 8-D IP TO220-5L • • • • • • • Low Start-up Current (Typ. 100uA ) Pulse by Pulse Current Limiting Over Load Protection Over Voltage Protection (Min. 25V) Internal Thermal Shutdown F unction Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mod e 1 1 1. GND 2. Drain 3. Vcc 4. FB 1.6 .7.8. Drain 2. GND 3. Vcc 4. FB 5..

Part

5H02659

Description

KA5H02659



Feature


www.fairchildsemi.com KA5x02xx-SERIES KA5H0265RC, KA5M0265R, KA5L0265R, KA5H0 2659RN/KA5M02659RN, KA5H0280R, KA5M0280 R Fairchild Power Switch(FPS) Features www.DataSheet4U.com • Precision Fixed Operating Frequency (100/67/50kHz) De scription The Fairchild Power Switch(FP S) product family is specially designed for an off-line SMPS with minimal exte rnal components. The.
Manufacture

Fairchild Semiconductor

Datasheet
Download 5H02659 Datasheet




 5H02659
www.fairchildsemi.com
KA5x02xx-SERIES
KA5H0265RC, KA5M0265R, KA5L0265R,
KA5H02659RN/KA5M02659RN, KA5H0280R,
KA5M0280R
Fairchild Power Switch(FPS)
Features
www.DataSheet4U.Pcroemcision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current (Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry-
compared to discrete MOSFET and controller or RCC
switching converter solution. The Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
TO-220F-4L
8-DIP
TO220-5L
Internal Block Diagram
1
1. GND
2. Drain
3. Vcc
4. FB
1
1
1.6.7.8. Drain
1. Drain
2. GND
2. GND
3. Vcc
3. Vcc
4. FB
4. FB
5. NC
5. S/S
VCC
32V
* Soft Start
uA
5V
FB
5µA 1mA 2.5R
9V 1R
+
5V Internal
Vref bias
Good
logic
OSC
+
S
Q
R
L.E.B
0.1V
7.5V
+ Thermal S/D
27V
OVER VOLTAGE S/D
S
Q
R
Power on reset
* KA5H0265RC
©2003 Fairchild Semiconductor Corporation
SFET
DRAIN
GND
Rev.1.0.4




 5H02659
KA5X02XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5x0265xRx
Drain-Gate Voltage (RGS=1M)
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
Continuous Drain Current (TC=25°C)
www.DataSheet4UC.coonmtinuous Drain Current (TC=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5x0280R
Drain-Gate Voltage (RGS=1M)
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Symbol
VDGR
VGS
IDM
ID
ID
EAS
VCC,MAX
VFB
PD
Darting
TJ
TA
TSTG
VDGR
VGS
IDM
ID
ID
EAS
VCC,MAX
VFB
PD
Darting
TJ
TA
TSTG
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
Value
650
±30
8.0
2.0
1.3
68
30
-0.3 to VSD
42
0.33
+160
-25 to +85
-55 to +150
800
±30
8.0
2.0
1.3
90
30
-0.3 to VSD
35
0.28
+160
-25 to +85
-55 to +150
Unit
V
V
ADC
ADC
ADC
mJ
V
V
W
W/°C
°C
°C
°C
V
V
ADC
ADC
ADC
mJ
V
V
W
W/°C
°C
°C
°C
2




 5H02659
KA5X02XX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
KA5x0265xRx
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSheet4US.tcaotmic Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
KA5x0280R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Symbol
BVDSS
IDSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
BVDSS
IDSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Condition
Min.
VGS=0V, ID=50µA
VDS=Max. Rating, VGS=0V
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
VGS=10V, ID=0.5A
VDS=50V, ID=0.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5B VDSS, ID=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)
VGS=10V, ID=1.0A,
VDS=0.5B VDSS (MOSFET
switching time is essentially
independent of operating
temperature)
650
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
VGS=0V, ID=50µA
VDS=Max. Rating, VGS=0V
VDS=0.8Max. Rating,
VGS=0V, TC=125°C
VGS=10V, ID=0.5A
VDS=50V, ID=0.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5B VDSS, ID=1.0A
(MOSFET switching time is
essentially independent of
operating temperature)
VGS=10V, ID=1.0A,
VDS=0.5B VDSS (MOSFET
switching time is essentially
independent of operating
temperature)
800
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
- 50 µA
- 200 µA
5.0 6.0
2.5 -
550 -
38 -
17 -
20 -
15 -
55 -
25 -
S
pF
nS
- 35
3 - nC
12 -
- -V
- 50 µA
- 200 µA
5.6 7.0
2.5 -
250 -
52 -
25 -
21 -
28 -
77 -
24 -
S
pF
nS
- 60
15 - nC
20 -
Note:
1. Pulse test: Pulse width 300µS, duty cycle 2%
2. S = -1--
R
3






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