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IRGBC40M-S Dataheets PDF



Part Number IRGBC40M-S
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGBC40M-S DatasheetIRGBC40M-S Datasheet (PDF)

www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have h.

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www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 24A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Max. 600 40 24 80 80 10 ±20 15 160 65 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Units V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA RθJA Wt Junction-to-Case Junction-to-Ambient, (PCB mount)** Junction-to-Ambient, typical socket mount Weight Min. — — — — Typ. — — — 2 (0.07) Max. 0.77 40 80 — Units °C/W g (oz) ** When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application note #AN-994. www.DataSheet4U.com C-347 Revision 1 To Order www.DataSheet4U.com Previous Datasheet Index Next Data Sheet IRGBC40M-S Electrical Characteristics @ T V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ J = 25°C (unless otherwise specified) Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.70 — V/°C VGE = 0V, I C = 1.0mA — 2.0 3.0 IC = 24A V GE = 15V — 2.6 — V IC = 40A — 2.4 — IC = 24A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -12 — mV/°C VCE = VGE, IC = 250µA 9.2 12 — S VCE = 100V, I C = 24A — — 250 µA VGE = 0V, V CE = 600V — — 1000 VGE = 0V, V CE = 600V, T J = 150°C — — ±100 nA VGE = ±20V VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Switching Characteristics @ T Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω J = 25°C (unless otherwise specified) Min. Typ. Max. Units Conditions — 59 80 IC = 24A — 8.6 10 nC VCC = 400V — 25 42 VGE = 15V — 26 — TJ = 25°C — 37 — ns IC = 24A, V CC = 480V — 240 410 VGE = 15V, R G = 10 Ω — 230 420 Energy losses include "tail" — 0.75 — — 1.65 — mJ — 2.4 3.6 10 — — µs VCC = 360V, T J = 125°C VGE = 15V, R G = 10 Ω, VCPK < 500V — 28 — TJ = 150°C, — 37 — ns IC = 24A, V CC = 480V — 380 — VGE = 15V, R G = 10 Ω — 460 — Energy losses include "tail" — 4.5 — mJ — 7.5 — nH Measured 5mm from package — 1500 — VGE = 0V — 190 — pF VCC = 30V — 20 — ƒ = 1.0MHz Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance www.DataSheet4U.com Refer to Section D for the following: Package Outline 2 - SMD-220 Section D - page D-12 C-348 To Order .


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