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BIPOLAR TRANSISTOR. IRGBC40S Datasheet

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BIPOLAR TRANSISTOR. IRGBC40S Datasheet






IRGBC40S TRANSISTOR. Datasheet pdf. Equivalent




IRGBC40S TRANSISTOR. Datasheet pdf. Equivalent





Part

IRGBC40S

Description

INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Datasheet
Download IRGBC40S Datasheet


International Rectifier IRGBC40S

IRGBC40S; www.DataSheet4U.com Previous Datasheet Index Next Data Sheet PD - 9.690A I RGBC40S INSULATED GATE BIPOLAR TRANSIST OR Features • Switching-loss rating i ncludes all "tail" losses • Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequenc y curve G E C Standard Speed IGBT VCE S = 600V VCE(sat) ≤ 1.8V @VGE = 15V, I C = 31A n-channel Des.


International Rectifier IRGBC40S

cription Insulated Gate Bipolar Transist ors (IGBTs) from International Rectifie r have higher usable current densities than comparable bipolar transistors, wh ile at the same time having simpler gat e-drive requirements of the familiar po wer MOSFET. They provide substantial be nefits to a host of high-voltage, highc urrent applications. TO-220AB Absolute Maximum Ratings P.


International Rectifier IRGBC40S

arameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25 °C PD @ T C = 100°C TJ TSTG Collector -to-Emitter Voltage Continuous Collecto r Current Continuous Collector Current Pulsed Collector Current Clamped Induct ive Load Current Gate-to-Emitter Voltag e Reverse Voltage Avalanche Energy Maxi mum Power Dissipation Maximum Power Dis sipation Operating Jun.



Part

IRGBC40S

Description

INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Datasheet
Download IRGBC40S Datasheet




 IRGBC40S
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Index
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INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.690A
IRGBC40S
Standard Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400 Hz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(sat) 1.8V
@VGE = 15V, IC = 31A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
600
50
31
240
100
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
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C-15
Min.
Typ.
0.50
2.0 (0.07)
Max.
0.77
80
Units
°C/W
g (oz)
Revision 0
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IRGBC40S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES Collector-to-Emitter Breakdown Voltage
V(BR)ECS Emitter-to-Collector Breakdown Voltage
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temp. Coeff. of Threshold Voltage
gfe Forward Transconductance
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min.
600
20
3.0
12
Typ. Max. Units
—— V
—— V
0.75 — V/°C
1.6 1.8
2.2 — V
1.7 —
— 5.5
-9.3 — mV/°C
21 — S
— 250 µA
— 1000
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 31A
VGE = 15V
IC = 60A
See Fig. 2, 5
IC = 31A, T J = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, I C = 31A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, T J = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 62 90
IC = 31A
— 10 15 nC VCC = 400V
See Fig. 8
— 27 40
VGE = 15V
— 28 —
TJ = 25°C
— 50 — ns IC = 31A, VCC = 480V
— 1100 1500
VGE = 15V, R G = 10
— 620 1100
Energy losses include "tail"
— 1.0 —
— 12 — mJ See Fig. 9, 10, 11, 14
— 13 20
— 29 —
TJ = 150°C,
— 53 —
— 1600 —
ns IC = 31A, VCC = 480V
VGE = 15V, R G = 10
— 1200 —
Energy losses include "tail"
— 22 — mJ See Fig. 10, 14
— 7.5 — nH Measured 5mm from package
— 1600 —
VGE = 0V
— 140 — pF VCC = 30V
See Fig. 7
— 20 —
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10, ( See fig. 13a )
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Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-16
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 IRGBC40S
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IRGBC40S
60
40
Square wave:
60% of rated
voltage
20
Ideal diodes
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 28W
Triangular wave:
C lam p voltage:
80% of ra ted
0
0.1 1 10
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
1000
TJ = 25 °C
100
TJ = 15 0°C
10
VGE = 15V
20µs PULSE WIDTH
1
0.1 1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
TJ = 25 °C
TJ = 1 50 °C
100
10
VCC = 100V
5µs PULSE W IDTH
1
5 10 15 20
VG E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
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C-17
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